Abstract:Controlling atomic structure and dynamics with single-atom precision is the ultimate goal in nanoscience and nanotechnology. Despite great successes being achieved by scanning tunneling microscopy (STM) over the past a few decades, fundamental limitations, such as ultralow temperature, and low throughput, significantly hinder the fabrication of a large array of atomically defined structures by STM. The advent of aberration correction in scanning transmission electron microscopy (STEM) revolutionized the field of nanomaterials characterization pushing the detection limit down to single-atom sensitivity. The sub-angstrom focused electron beam (e-beam) of STEM is capable of interacting with an individual atom, thereby it is the ideal platform to direct and control matter at the level of a single atom or a small cluster. In this article, we discuss the transfer of energy and momentum from the incident e-beam to atoms and their subsequent potential dynamics under different e-beam conditions in 2D materials, particularly transition metal dichalcogenides (TMDs). Next, we systematically discuss the e-beam triggered structural evolutions of atomic defects, line defects, grain boundaries, and stacking faults in a few representative 2D materials. Their formation mechanisms, kinetic paths, and practical applications are comprehensively discussed. We show that desired structural evolution or atom-by-atom assembly can be precisely manipulated by e-beam irradiation which could introduce intriguing functionalities to 2D materials. In particular, we highlight the recent progress on controlling single Si atom migration in real-time on monolayer graphene along an extended path with high throughput in automated STEM. These results unprecedentedly demonstrate that single-atom dynamics can be realized by an atomically focused e-beam. With the burgeoning of artificial intelligence and big data, we can expect that fully automated microscopes with real-time data analysis and feedback could readily design and fabricate large scale nanostructures with unique functionalities in the near future.

Mechanism of electron-beam manipulation of single dopant atoms in silicon

Direct atomic fabrication and dopant positioning in Si using electron beams with active real time image-based feedback

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Scanned single-electron probe inside a silicon electronic device

Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision

E-beam manipulation of Si atoms on graphene edges with aberration-corrected STEM

Electron‐Beam Manipulation of Silicon Impurities in Single‐Walled Carbon Nanotubes

Surface reconstruction induced anisotropic energy landscape of bismuth monomers and dimers on the Si(001) surface

Electron-beam Introduction of Heteroatomic Pt-Si Structures in Graphene

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Atomic-scale Control of Tunnel Coupling

Subnanometer-resolution Depth Profiling of Boron Atoms and Lattice Defects in Silicon Ultrashallow Junctions by Ion Beam Techniques

Bismuth trichloride as a molecular precursor for silicon doping

Novel characterisation of dopant-based qubits

Superexchange coupling of donor qubits in silicon

Electron beam triggered single-atom dynamics in two-dimensional materials

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms

Controlled nanoscale doping of semiconductors via molecular monolayers

Donor spins in silicon for quantum technologies