Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition

Dmitry Ruzmetov,Don Heiman,Bruce B. Claflin,Venkatesh Narayanamurti,Shriram Ramanathan

DOI: https://doi.org/10.1103/PhysRevB.79.153107

2010-06-23

Abstract:Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, ~0.1cm2/V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is related to the measurement and understanding of carrier density and magnetoresistance behavior in vanadium dioxide (VO₂) thin films during the metal - insulator transition (MIT). Specifically, the authors focus on the following aspects:

1. **Change in carrier density**:
- The authors studied the change in carrier density in VO₂ thin films during the metal - insulator transition through Hall effect measurements. They found that near the transition temperature, the carrier density increased by four orders of magnitude, from \(1.1\times 10^{19}\, \text{cm}^{-3}\) to \(1.7\times 10^{23}\, \text{cm}^{-3}\), which almost completely explains the sharp drop in resistivity.

2. **Change in Hall mobility**:
- Research shows that the Hall mobility does not change much before and after the metal - insulator transition and remains at a low level, approximately \(0.1\, \text{cm}^2/\text{V}\cdot\text{s}\).

3. **Magnetoresistance behavior**:
- A small positive magnetoresistance was measured in the semiconductor phase, that is, the resistance increased slightly when a magnetic field was applied at room temperature. Specifically, the magnetoresistance in a 12 - tesla magnetic field is \(0.09\pm0.02\%\).

4. **Improvement of experimental techniques**:
- In order to overcome the noise problems and low Hall signal problems in previous experiments, the authors used a direct - current measurement technique with a high magnetic field (up to 12 tesla) and combined it with other electron transport data, so that they could more reliably determine the carrier density of high - quality VO₂ thin films in different phases.

5. **Verification of theoretical models**:
- Through these measurements, the authors hope to verify different theoretical models (such as the Peierls model, Mott - Hubbard model, etc.) for understanding the VO₂ metal - insulator transition mechanism and explore the role of carrier density in this transition.

In summary, this paper aims to deeply understand the electrical transport characteristics of VO₂ thin films during the metal - insulator transition through precise Hall effect and magnetoresistance measurements, especially the change in carrier density and its impact on resistivity. This not only helps to reveal the basic physical properties of VO₂ materials but also provides important experimental evidence for its applications in electronic and optoelectronic devices.