Abstract:Abstract Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

Electronic properties of delta-doped phosphorus layers in silicon and germanium

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Suppression of mid-infrared plasma resonance due to quantum confinement in delta-doped silicon

A comprehensive model of high-concentration phosphorus diffusion in silicon

Ultradense Phosphorous Delta Layers Grown into Silicon from Ph3 Molecular Precursors

Single-electron states of phosphorus-atom arrays in silicon

Multi-valley envelope function equations and effective potentials for P impurity in silicon

Tight-Binding Calculations Of The Optical Response Of Optimally P-Doped Si Nanocrystals: A Model For Localized Surface Plasmon Resonance

Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

Simulation of phosphorus implantation into silicon with a single-parameter electronic stopping power model

The Distribution of Density of Gap States for Phosphorus Doped Amorphous Silicon Measured by DLTS

Electronic structure of boron and aluminum $δ$-doped layers in silicon

Effective mass theory of monolayer δ-doping in the high-density limit

Liquid-Phase Diffusion of Phosphorus Atoms in Laser-Doped Crystalline Silicon Solar Cells

Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon

Semiempirical Electronic-Structure Calculations of Hydrogen-Phosphorus-Vacancy Complexes in Crystalline Silicon

Electronic Structure of Vacancy-Phosphorus Impurity Complexes in Silicon

Model of phosphorus diffusion in silicon for highly doped solar cell emitter layer

Strain-induced Weyl and Dirac states and direct-indirect gap transitions in group-V materials

Electron Transport In Laterally Confined Phosphorus Delta Layers In Silicon