Abstract:Over the past two decades, prototype devices for future classical and quantum computing technologies have been fabricated by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these successes, phosphine remains the only donor precursor molecule to have been demonstrated as compatible with the hydrogen resist lithography technique. The potential benefits of atomic-scale placement of alternative dopant species have, until now, remained unexplored. In this work, we demonstrate the successful fabrication of atomic-scale structures of arsenic-in-silicon. Using a scanning tunneling microscope tip, we pattern a monolayer hydrogen mask to selectively place arsenic atoms on the Si(001) surface using arsine as the precursor molecule. We fully elucidate the surface chemistry and reaction pathways of arsine on Si(001), revealing significant differences to phosphine. We explain how these differences result in enhanced surface immobilization and in-plane confinement of arsenic compared to phosphorus, and a dose-rate independent arsenic saturation density of 0.24 ± 0.04 monolayers. We demonstrate the successful encapsulation of arsenic delta-layers using silicon molecular beam epitaxy, and find electrical characteristics that are competitive with equivalent structures fabricated with phosphorus. Arsenic delta-layers are also found to offer confinement as good as similarly prepared phosphorus layers, while still retaining >80% carrier activation and sheet resistances of <2 kΩ/square. These excellent characteristics of arsenic represent opportunities to enhance existing capabilities of atomic-scale fabrication of dopant structures in silicon, and may be important for three-dimensional devices, where vertical control of the position of device components is critical.

Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

Ultradense Phosphorous Delta Layers Grown into Silicon from Ph3 Molecular Precursors

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Measurement of phosphorus segregation in silicon at the atomic-scale using STM

Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor phase diffusion of phosphine followed by rapid thermal annealing

Mineral Interface Doping: Hydroxyapatite Deposited on Silicon to Trigger the Electronic Properties

Phosphorus ionization in silicon doped by self-assembled macromolecular monolayers

Single-electron states of phosphorus-atom arrays in silicon

High Phosphorus Doping of Epitaxial Silicon at Low Temperature and Very Low Pressure

Quantum-mechanical study of the optimal phosphorus atoms arrangement on silicene

Doping silicon nanocrystals with boron and phosphorus

Phosphorus doping of ultra-small silicon nanocrystals

Simulation of Si:P spin-based quantum computer architecture

Deep Level Transient Spectroscopic Investigation of Phosphorus-Doped Silicon by Self-Assembled Molecular Monolayers

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals