Abstract:Abstract Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

Quantum-mechanical study of the optimal phosphorus atoms arrangement on silicene

Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Simulation of Si:P spin-based quantum computer architecture

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Single-electron states of phosphorus-atom arrays in silicon

Superexchange coupling of donor qubits in silicon

Quantum confinement and surface chemistry of 0.8–1.6 nm hydrosilylated silicon nanocrystals

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Insights on molecular P implantation for scalable spin-qubit arrays

Tight-Binding Calculations Of The Optical Response Of Optimally P-Doped Si Nanocrystals: A Model For Localized Surface Plasmon Resonance

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers

Engineering Spin‐Orbit Interactions in Silicon Qubits at the Atomic‐Scale

Electronic Structure of Vacancy-Phosphorus Impurity Complexes in Silicon

First-Principle Study of Phosphine Adsorption on Si(001)-2$\times$1-Cl

Adsorption and absorption of Boron, Nitrogen, Aluminium and Phosphorus on Silicene: stability, electronic and phonon properties

Selective Substitution Induced Anomalous Phonon Stiffening Within Quasi-One-dimensional P—P Chains in SiP 2

Modulation of Surface States by Phosphorus to Improve the Optical Properties of Ultra-Small Si Nanocrystals

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon