Abstract:The creation of multiple emission pathways in quantum dots (QDs) is an exciting prospect with fundamental interest and optoelectronic potential. For the first time, we report multiple emission pathways in semiconductor nanocrystals (NCs) where the number of emission pathways desired is controlled by the number of dopant atoms per quantum dot. The origin of additional emission pathways is explained by interactions between dopant states and NC energy levels. Density functional theory (DFT) calculations of undoped 2.3 nm silicon (Si NCs) and the same NCs doped with 2 interstitial Cu atoms show good agreement to experiment. Such calculations provide valuable data to explain the changes in optical transitions due to the Cu dopant in terms of transition energies, quantum yield and dopant position as a function of dopants per NC. Changes in the optical properties of Si NCs induced by dopant concentration include extended excitation range and enhanced absorption coefficients, emission redshifts of up to 60 nm, and a two-fold increase in quantum yields up to 22%. The optical properties of doped NCs lead to significant bioimaging improvements illustrated by in vitro cell imaging, including redshifted excitation wavelengths away from natural autofluorescence and enhanced fluorescent signals.

Modulation of Surface States by Phosphorus to Improve the Optical Properties of Ultra-Small Si Nanocrystals

Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication.

Doping silicon nanocrystals with boron and phosphorus

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Doping Effect in Si Nanocrystals/SiO2 Multilayers

Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Enhanced carrier mobility in Si nano-crystals via nanoscale phosphorus doping

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Lightly boron and phosphorus co-doped silicon nanocrystals

Phosphorus Doping Effect on Linear and Nonlinear Optical Properties of Si/SiO 2 Multilayers

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

Nonlinear Optical Absorption and Ultrafast Optical Response of Un-Doped and P-doped Nanocrystalline Si/SiO2 Multilayers

Tight-Binding Calculations Of The Optical Response Of Optimally P-Doped Si Nanocrystals: A Model For Localized Surface Plasmon Resonance

Critical role of dopant location for P-doped Si nanocrystals

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures