Abstract:Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO 2 multilayers are fabricated. As revealed by XPS and ESR measurements, P dopants will preferentially passivate the surface states of Si NCs. Meanwhile, low temperature ESR spectra indicate that some P dopants are incorporated into Si NCs substitutionally and the incorporated P impurities increase with the P doping concentration or annealing temperature increasing. Furthermore, a kind of defect states will be generated with high doping concentration or annealing temperature due to the damage of Si crystalline lattice. More interestingly, the incorporated P dopants can generate deep levels in the ultra-small sized (~2 nm) Si NCs, which will cause a new subband light emission with the wavelength compatible with the requirement of the optical telecommunication. The studies of P-doped Si NCs/SiO 2 multilayers suggest that P doping plays an important role in the electronic structures and optoelectronic characteristics of Si NCs.

Enhanced carrier mobility in Si nano-crystals via nanoscale phosphorus doping

Doping silicon nanocrystals with boron and phosphorus

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Modulation of Surface States by Phosphorus to Improve the Optical Properties of Ultra-Small Si Nanocrystals

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Doping Effect in Si Nanocrystals/SiO2 Multilayers

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Temperature-dependent carrier transport behaviors in phosphorus-doped silicon nanocrystals/silicon carbide multilayers

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication.

Lightly boron and phosphorus co-doped silicon nanocrystals

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Critical role of dopant location for P-doped Si nanocrystals

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film