High Phosphorus Doping of Epitaxial Silicon at Low Temperature and Very Low Pressure

XD Huang,P Han,H Chen,YD Zheng,LQ Hu,RH Wang,SM Zhu,D Feng
DOI: https://doi.org/10.1116/1.589005
1996-01-01
Abstract:In situ phosphorus doped Si epitaxial layers have been grown at 600 °C in a very low pressure chemical vapor deposition system, using SiH4 and PH3 diluted in H2. The presence of H2 was found to decelerate the epitaxial growth rates. Secondary-ion mass spectrometry measurement shows that the constant phosphorus concentration with depth for a steady flow of PH3 was achieved. Namely, dopant concentration is a function of gas phase dopant concentration. Chemical concentration as high as 2.5×1020 P/cm3 was obtained in Si epitaxial layers though with very low growth rate. Epilayers with constant doping levels from 1.5×1018 P/cm3 to 1.2×1020 can readily be grown. Despite the relatively low growth rate, there is no evidence of a time-dependent accumulation of phosphorus on the growth surface or the reactor wall. The reasons accounting for this phenomenon are discussed.
What problem does this paper attempt to address?