Abstract:The effects of carbon in heavily phosphorus-doped Czochralski (HP-Cz) silicon (Si) substrates, with the concentrations across an order of magnitude from 1016 to 1017 cm−3, on the out-diffusion of phosphorus impurities within n/n+ epitaxial Si (Epi-Si) wafers have been investigated. It is found that the increase in the carbon concentration ([C]) from 1.0 × 1016 to 1.0 × 1017 cm−3 leads to the enhanced phosphorus out-diffusion within the n/n+ Epi-Si wafer when subjected to anneal at 1100 °C in an N2 or an O2 ambient or to anneal at 1150 °C in an N2 ambient, but hardly affects the phosphorus out-diffusion within the n/n+ Epi-Si wafer when subjected to anneal at 1150 °C in an O2 ambient. Based on the density functional theory calculations, it is derived that the increase in the [C] from 1.0 × 1016 to 1.0 × 1017 cm−3 in the HP-Cz Si substrate results in a significantly increased thermal equilibrium concentration of self-interstitial silicon (SiI) atoms at 1100 or 1150 °C, which, in turn, leads to the increased concentration of the SiI atoms that out-diffuse from the substrate to the epitaxial layer because the SiI atoms diffuse extremely fast in Si. Such a carbon-induced increase in the concentration of SiI atoms is believed to be responsible for the aforementioned enhanced phosphorus out-diffusion, which is predominantly dictated by the interstitialcy mechanism. In the case of anneal in the O2 ambient at sufficiently high temperatures such as 1150 °C, a large number of excessive SiI atoms injected into the Epi-Si wafer substantially mask the carbon enhancement effect on the phosphorus out-diffusion. Of technological significance, it is deduced that the [C] should be not higher than 1.0 × 1016 cm−3 in the HP-Cz Si wafers as the substrates of n/n+ Epi-Si wafers used for power devices.

Crystal growth and resistivity modulation of n-type phosphorus-doped cast mono-like silicon

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Distribution of the Electrical Resistivity of a N-Type 4H-Sic Crystal

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Effects of Heavy Phosphorus-Doping on Mechanical Properties of Czochralski Silicon

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

High Phosphorus Doping of Epitaxial Silicon at Low Temperature and Very Low Pressure

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

EFFECT OF VARIABLE TEMPERATURE PHOSPHOROUS GETTERING TREATMENTS ON THE PERFORMANCE OF MULTICRYSTALLINE SILICON

Growth and characterization of nitrogen-phosphorus hybrid passivated gate oxide film on N-type 4H-SiC epilayer

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Doping silicon nanocrystals with boron and phosphorus

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Effect of melt flow rate and S/L interface on the P horizontal distribution in silicon

Controllable Nitrogen Doping in Multicrystalline Silicon by Casting under Low Cost Ambient Nitrogen

Electrical activation of ion mass doped phosphorous

High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor phase diffusion of phosphine followed by rapid thermal annealing