Abstract:The Poly-Si/SiO x stack passivation structure incorporate doped polycrystalline silicon (Poly-Si) and tunneling silicon oxide (SiO x ) thin films allows for majority-carrier transport as well as block minority carriers and suppress recombination, and thus enable very high efficiency. Up to now the Poly-Si/SiO x stack passivation have been a widespread research topic for photovoltaic researchers, but most of the works are only focused on n-type doped structures and the rear side polished surface of the solar cells. In order to apply the Poly-Si/SiO x stack structure to the front textured surface and p + emitter region to obtain high-efficiency double-sided passivated contact solar cells and Si-based tandem cells in the future. In this work, passivation properties of Poly-Si/SiO x stack capped with SiN x :H layer are discussed based on different crystalline silicon surface morphologies, dopant types, doping profiles and thickness of Poly-Si layer. With proper doping process control, an excellent implied open-circuit voltage ( iVoc ) of 706 mV with a saturation current density ( J 0 ) value of 12 f A/cm 2 has been obtained for the boron-doped Poly-Si/SiO x stack capped with SiN x :H based on the textured surface, and an iVoc of 736 mV with a J 0 value of 2 f A/cm 2 has been acquired for the phosphorus-doped Poly-Si/SiO x stack capped with SiN x :H based on the acid polished surface. The results show that the polished surface and thinner Poly-Si layer are helpful for passivation. For the doped Poly-Si/SiO x stack structure, the doping source will penetrate the tunneling SiO x layer into the silicon bulk to form a certain penetration depth on the surface of the silicon substrate. In order to acquire the high iVoc (low J 0 ) value, a penetration depth of around 160 nm is needed to the phosphorus-doped Poly-Si/SiO x stack, while a penetration depth of less than 25 nm is required for boron-doped Poly-Si/SiO x stack. In addition, there is a linear relationship between the R sheet value and the reciprocal value of the Poly-Si (n + ) layer thickness.

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Effect of melt flow on impurity distribution in directional solidification of silicon solar cells

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Optimized Phosphorus Diffusion Process and Performance Improvement of C-Si Solar Cell by Eliminating SiP Precipitates in the Emitter

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

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Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Carrier Dynamics of Nanopillar Textured Ultrathin Si Film/PEDOT:PSS Heterojunction Solar Cell

Crystal growth and resistivity modulation of n-type phosphorus-doped cast mono-like silicon

Effect of diffusion doping-induced defects on shunt resistance affecting Si-nanowire solar cell performance

Effect of annealing conditions on phosphorus inward diffusion from N + Poly-Si layer in N-type TOPCon solar cells

Influence of Low Rate P/I Interface Layer on the Performance of High Growth Rate Microcrystalline Silicon Solar Cells

Study on P-a-Si:H properties of N-type heterogeneous junction solar cells manufactured by large-area parallel plate PECVD machine

Continuous Distribution of Interface States in N-Type Double-Side Poly-Si/siox Passivating Contact Solar Cells

Effect of Surface Texture on Pinhole Formation in SiO x-Based Passivated Contacts for High-Performance Silicon Solar Cells

Impact of the n+ emitter layer on the structural and electrical properties of p-type polycrystalline silicon thin-film solar cells

Direct Observation of the Impurity Gettering Layers in Polysilicon-Based Passivating Contacts for Silicon Solar Cells

The Passivation Characteristics of Poly-Si/SiOx Stack for High-Efficiency Silicon Solar Cells

Phosphorus-diffused polysilicon contacts for solar cells

Model of phosphorus diffusion in silicon for highly doped solar cell emitter layer

Improved Device Performance of Si-based Heterojunction Solar Cells by Using Phosphorus Doped Si Nanocrystals Embedded in SiC Host Matrix