Abstract:Doping silicon wafers without using highly toxic or corrosive chemical substances is a critical issue for semiconductor device manufacturing. Peter Thissen and Roberto C. Longo investigate thin mineral layers of hydroxyapatite as a doping basis. Measurements show that the phosphorus is transported through the silicon oxide barrier, then diffuses inside the oxide‐free silicon and finally changes the electrical activity. Doping silicon wafers without using highly toxic or corrosive chemical substances has become a critical issue for semiconductor device manufacturing. In this work, ultra‐thin films of hydroxyapatite (Ca5(PO4)3OH) are prepared by tethering by aggregation and growth (T‐BAG), and further processed by spike annealing. Via in situ infrared (IR), the decomposition of hydroxyapatite and intermixing with the native silicon oxide is observed already at temperatures as low as 200 °C. Phosphate transport through the native silicon oxide is driven by a phase transformation into a more stable thermal oxide. At 700 °C, diffusion of phosphorus into the sub‐surface region of oxide‐free silicon is observed. In situ IR combined with electrical impedance spectroscopy (EIS), time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS), and X‐ray photoelectron spectroscopy (XPS) measurements allows to conclude that the phosphorus is: i) transported through the silicon oxide barrier, ii)) diffused inside the oxide‐free silicon, and iii) finally modified the electrical activity of the silicon wafer. To further explain the experimental findings, density‐functional theory (DFT) is used to demonstrate the extent of the effect of phosphorus doping on the electronic nature of silicon surfaces, showing that even small amounts of doping can have a measurable effect on the electrical performance of semiconductor wafers.

Phosphorus doping of ultra-small silicon nanocrystals

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

Doping silicon nanocrystals with boron and phosphorus

Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Size Dependence of Phosphorus Doping in Silicon Nanocrystals

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Modulation of Surface States by Phosphorus to Improve the Optical Properties of Ultra-Small Si Nanocrystals

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication.

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Doping Effect in Si Nanocrystals/SiO2 Multilayers

Doped Silicon Nanoparticles Synthesized by Nonthermal Plasma

Mineral Interface Doping: Hydroxyapatite Deposited on Silicon to Trigger the Electronic Properties

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers