Abstract:Abstract Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

Investigation of Phosphorus Surface Segregation by X-ray Scattering Measurements

Measurement of phosphorus segregation in silicon at the atomic-scale using STM

Dopant Activation In Poly-Si1-Xgex At Low Temperature

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Low-Temperature Epitaxy of Phosphorus Doped Si and Si1-Xgex Films by Rtp/Vlp-Cvd

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

High Phosphorus Doping of Epitaxial Silicon at Low Temperature and Very Low Pressure

Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Surface Segregation of Ingaas Films by the Evolution of Reflection High-Energy Electron Diffraction Patterns

Ultradense Phosphorous Delta Layers Grown into Silicon from Ph3 Molecular Precursors

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor phase diffusion of phosphine followed by rapid thermal annealing

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films

In Situ Phosphorus Doping of Si and Si<sub>1-x</sub>Ge<sub>x</sub> Epitaxial Layers by RTP/VLP-CVD

Grain boundary character dependence of phosphorus segregation at ferrite grain boundaries in a high-purity iron-phosphorus binary alloy

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (001)