Abstract:Effects of boron and phosphorus doping on the structural, electrical, and optical properties of silicon nanocrystals in superlattice thin films were investigated. Silicon nanocrystals were fabricated via magnetron sputtering of stoichiometric silicon rich oxide and silicon dioxide bilayers followed by high temperature annealing at 1100 degrees Celsius. The characterization techniques used include: high-resolution transmission electron microscopy with energy filtering, grazing incidence x-ray diffraction, Raman, photoluminescence, and photothermal deflection spectroscopy, as well as electrical measurements. Results showed that phosphorus doping causes the loss of the bilayer structure and an increase in the average size of the silicon nanocrystals due to softening of the silicon dioxide matrix during post-sputter annealing. The result was a decrease in quantum confinement and a redshift in photoluminescence spectrum with an absorption profile similar to crystalline silicon. The undoped (intrinsic) sample maintained its bilayer structure and displayed stronger quantum confinement with higher photoluminescence peak energy and higher absorption coefficient. In-between, the boron doped sample was more similar structurally to the intrinsic sample, although merging between bilayers resulted in an extensive silicon nanocrystalline network. Optically, it displayed different effects due to photoluminescence quenching and free carrier absorption. Finally, both doped samples exhibited a decrease in electrical resistivity.

Subband Light Emission from Phosphorous-Doped Amorphous Si/Sio2 Multilayers at Room Temperature

Enhanced Subband Light Emission from Si Quantum Dots/sio2 Multilayers Via Phosphorus and Boron Co-Doping

Time-resolved and temperature-dependent photoluminescence study on phosphorus doped Si quantum dots/SiO 2 multilayers with ultra-small dot sizes

Electroluminescence from nano-crystalline Si/ SiO2 structures embedded in pn junctions

Intermediate Phase Silicon Structure Induced Enhancement of Photoluminescence from Thermal Annealed A-Si/Sio2 Multilayers

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication.

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Structural and Luminescent Properties of Electron-Irradiated Silicon

Enhanced Green to Red Photoluminescence in Thermally Annealed of Amorphous-Si:H/sio2 Multilayers

Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

Visible photoluminescence in crystallized amorphous Si:H/SiN<i>x</i>:H multiquantum-well structures

Photoluminescence Properties of Alternating Nanocrystalline Silicon/amorphous Silicon Multilayers

Strong Blue Photoluminescence from As-Fabricated Amorphous-Si:H∕sio2 Multilayers

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

Full Color Light Emission from Amorphous SiCx:H with Organic–inorganic Structures

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers