Abstract:Direct-band silicon materials have been a sought-after material for potential applications in silicon photonics and solar cells. Accordingly, methodologies like nanostructure engineering, alloy engineering and strain engineering have been developed. In this work, the particle swarm optimization (PSO) algorithm is used to design direct-band Si-Ge alloys. The findings of phonon computations demonstrate that all these structures are dynamically stable. In addition, ab initio molecular dynamics and elastic constant calculations are carried out, with results indicating these structures are thermodynamically stable at 300 K as well as being mechanically stable. All of these materials exhibit semiconductor behavior with band gaps of 1.03, 0.68 and 1.37 eV for α, β and γ phases, respectively, at the HSE06 level. The results of effective mass and mobility of carriers that are important in applications show that holes are more easily transported in all structures but that the higher concentration of holes, the lower the carried mobility. Different concentrations of holes n_h lead to different limits to the scattering process. When n_h is lower than the value of around 〖10〗^16 cm^(-3), deformation potential scattering is dominant, while the ionized impurity scattering process limits overall mobility when n_h is higher than such a value. Finally, the absorption spectra display that both α and β phases have isotropic optical properties in the X- and Y- directions while strong anisotropy can be seen in the Z-direction. However, the γ phase exhibits no notable isotropy. This investigation finds three direct-band and potentially CMOS compatible materials, which will benefit the development of high efficiency emitter or solar cells.

Identifying Direct Bandgap Silicon Structures with High-throughput Search and Machine Learning Methods

Tuning Of Electronic And Optical Properties Of A Predicted Silicon Allotrope: Hexagonal Silicon H10-Si

Direct and Quasi-Direct Band Gap Silicon Allotropes with Low Energy and Strong Absorption in the Visible for Photovoltaic Applications

Discovery of Novel Silicon Allotropes with Optimized Band Gaps to Enhance Solar Cell Efficiency through Evolutionary Algorithms and Machine Learning

Zeolite Framework Silicon Allotropes with Direct Band Gap

Optical Characterisation of Silicon Nanocrystals Embedded in SiO2/Si3N4 Hybrid Matrix for Third Generation Photovoltaics.

Structures and absorption optical spectra of silicon cluster Si 9 via first-principles calculations

High-throughput calculation screening for new silicon allotropes with monoclinic symmetry

Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Low-density silicon allotropes for photovoltaic applications

Six novel carbon and silicon allotropes with their potential application in photovoltaic field.

A Review on Metastable Silicon Allotropes

A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties.

Two Novel Silicon Phases With Direct Band Gaps

A COMPUTATIONAL DESIGN OF Si-BASED DIRECT BAND-GAP MATERIALS

Tuning of electronic and optical properties of a predicted silicon allotrope: Hexagonal silicon h 10 -Si

Direct-gap semiconducting tri-layer silicene with 29% photovoltaic efficiency

Direct Bandgap Measurements in a Three-Dimensionally Macroporous Silicon 9R Polytype Using Monochromated Transmission Electron Microscope

Helium Incorporation Induced Direct-Gap Silicides

Theoretical prediction of a novel hexagonal narrow-gap silicon allotrope under high pressures