Abstract:Direct-band silicon materials have been a sought-after material for potential applications in silicon photonics and solar cells. Accordingly, methodologies like nanostructure engineering, alloy engineering and strain engineering have been developed. In this work, the particle swarm optimization (PSO) algorithm is used to design direct-band Si-Ge alloys. The findings of phonon computations demonstrate that all these structures are dynamically stable. In addition, ab initio molecular dynamics and elastic constant calculations are carried out, with results indicating these structures are thermodynamically stable at 300 K as well as being mechanically stable. All of these materials exhibit semiconductor behavior with band gaps of 1.03, 0.68 and 1.37 eV for α, β and γ phases, respectively, at the HSE06 level. The results of effective mass and mobility of carriers that are important in applications show that holes are more easily transported in all structures but that the higher concentration of holes, the lower the carried mobility. Different concentrations of holes n_h lead to different limits to the scattering process. When n_h is lower than the value of around 〖10〗^16 cm^(-3), deformation potential scattering is dominant, while the ionized impurity scattering process limits overall mobility when n_h is higher than such a value. Finally, the absorption spectra display that both α and β phases have isotropic optical properties in the X- and Y- directions while strong anisotropy can be seen in the Z-direction. However, the γ phase exhibits no notable isotropy. This investigation finds three direct-band and potentially CMOS compatible materials, which will benefit the development of high efficiency emitter or solar cells.

A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties.

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

A Review on Metastable Silicon Allotropes

Direct and quasi-direct band gap silicon allotropes with remarkable stability

Low-energy silicon allotropes with strong absorption in the visible for photovoltaic applications

fvs-Si48: a direct bandgap silicon allotrope

Dipole-Allowed Direct Band Gap Silicon Superlattices

High-throughput calculation screening for new silicon allotropes with monoclinic symmetry

Three-dimensional pentagonal silicon: Stability and properties

Low-density silicon allotropes for photovoltaic applications

Theoretical prediction of a novel hexagonal narrow-gap silicon allotrope under high pressures

Identifying Direct Bandgap Silicon Structures with High-throughput Search and Machine Learning Methods

Tuning of electronic and optical properties of a predicted silicon allotrope: Hexagonal silicon h 10 -Si

Stable Porous Crystalline Silicon with Nanotubular Structure: A Predicted Allotrope with Direct Band Gap

SiC siligraphene: a novel SiC allotrope with wide tunable direct band gap and strong anisotropy

Two-dimensional Silicon Crystals with Sizable Band Gaps and Ultrahigh Carrier Mobility.

Discovery of Novel Silicon Allotropes with Optimized Band Gaps to Enhance Solar Cell Efficiency through Evolutionary Algorithms and Machine Learning

Bi2OS2: a Direct-Gap Two-Dimensional Semiconductor with High Carrier Mobility and Surface Electron States