Direct and quasi-direct band gap silicon allotropes with remarkable stability

Chaoyu He,Chunxiao Zhang,Jin Li,Xiangyang Peng,Lijun Meng,Chao Tang,Jianxin Zhong

DOI: https://doi.org/10.1039/c6cp00451b

IF: 3.3

2016-01-01

Physical Chemistry Chemical Physics

Abstract:Promising low energy direct or quasi-direct band gap semiconductors for solar cell application.

chemistry, physical,physics, atomic, molecular & chemical

What problem does this paper attempt to address?

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

dongchen lan,dawei di,gavin conibeer,xuguang jia,lingfeng wu

DOI: https://doi.org/10.1117/12.2002775

2013-01-01

Abstract:Silicon quantum dot (Si QD) tandem solar cell is a promising cell structure for realising high efficiency at low cost. The tandem solar cell effectively harnesses energy from the solar spectrum by stacking two or more cells together in the order of descending band gaps. Due to quantum confinement, the band gap of silicon based nanostructures such as Si QDs can be tailored by varying the size of the QDs. Solar cells and light emitting diodes based on Si QDs have been realised in experiments. However, current crowding due to high lateral resistance remains to be a major problem for Si QD devices grown on quartz substrates. Annealed silicon rich carbide (SRC), owing to its electrical conductivity, thermal stability and energy band gap compatible with Si QD cell fabrication, has the potential to overcome this problem. Further, this quasi-transparent thin-film can be used as either substrate or superstrate of a Si QD solar cell and therefore provides flexibility in cell structure design. Here, we investigate the physical, optical and electrical properties of the new material as functions of silicon concentration and doping conditions via a number of characterisation techniques including X-ray diffraction, Raman spectroscopy, ultraviolet-visible-infrared spectroscopy and four-point probe measurement. Some discoveries, including the lower crystallisation temperature of SiC within SRC, are also discussed. The research may provide some insight into the optimisation of annealed SRC as the new conductive material for Si QD solar cell and may boost the final arrival of all-silicon tandem solar cell.
Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Gavin Conibeer,Martin A. Green,Dirk Koenig,Ivan Perez-Wurfl,Shujuan Huang,Xiaojing Hao,Dawei Di,Lei Shi,Santosh Shrestha,Binesh Puthen-Veetil,Yong So,Bo Zhang,Zhenyu Wan

DOI: https://doi.org/10.1002/pip.1045

2010-01-01

Progress in Photovoltaics Research and Applications

Abstract:Silicon quantum dot (Si QD) solar cells offer the potential to tune the effective band gap through quantum confinement and hence allow fabrication of optimised tandem devices in one growth run in a thin film process. Previous work in our group has shown how such cells can be fabricated by sputtering of thin layers of silicon rich oxide sandwiched between a stoichiometric oxide that on annealing crystallise to form Si QDs of uniform and controllable size. Doping multilayers with P and B allows formation of a rectifying junction with an effective band gap of 1.8 eV, which can give an open circuit voltage (V(OC)) of almost 500 mV. However, the doping behaviour of P and B in these QD materials is not well understood. In addition P and B have big but opposite effects on QD crystallisation, with P(B) forming larger (smaller) QDs than for undoped material. Two possible models for the doping mechanisms in these materials are explored: one relying on doping of a sub-oxide region around the Si QDs and the other based on the differing nucleation effects of P and B. In addition initial results on hetero-interfaces in the QD superstructure are assessed as a means to improve vertical current transport, and the effects of hydrogenation on improving V(OC) by passivating defects. Routes to incorporating these explanations for doping and other structural improvements are discussed as means of optimising the performance of these Si QD cells. Copyright (C) 2010 John Wiley & Sons, Ltd.
A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties.

Yaguang Guo,Qian Wang,Yoshiyuki Kawazoe,Puru Jena

DOI: https://doi.org/10.1038/srep14342

IF: 4.6

2015-01-01

Scientific Reports

Abstract:Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications.
Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Dawei Di,Heli Xu,Ivan Perez-Wurfl,Martin A. Green,Gavin Conibeer

DOI: https://doi.org/10.1002/pip.1230

2011-01-01

Abstract:ABSTRACTAn all‐Si tandem solar cell has the potential to achieve high conversion efficiency at low cost. However, the selection and synthesis of candidate material remain challenging. In this work, we show that the conventional ‘Si quantum dots (Si QDs) in SiO2 matrix’ approach can lead to the formation of over‐sized Si nanocrystals especially when doped with phosphorous, making the size‐dependent quantum confinement less effective. Also, our investigation has shown that the high resistivity of this material has become the performance bottleneck of the solar cell. To resolve these matters, we propose a new design based on Si QDs embedded in a SiO2/Si3N4 hybrid matrix. By replacing the SiO2 tunnel barriers by the Si3N4 layers, the new material manages to constrain the growth of doped Si QDs effectively and enhances the apparent band gap, as shown in X‐ray diffraction, Raman, photoluminescence and optical spectroscopic measurements. Besides, electrical characterisation on Si QD/c‐Si heterointerface test structures indicates the new material possesses improved vertical carrier transport properties. Copyright © 2011 John Wiley & Sons, Ltd.
Si Solid-State Quantum Dot-Based Materials for Tandem Solar Cells.

Gavin Conibeer,Ivan Perez-Wurfl,Xiaojing Hao,Dawei Di,Dong Lin

DOI: https://doi.org/10.1186/1556-276x-7-193

2012-01-01

Nanoscale Research Letters

Abstract:The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabricate tandem cells using thin-film deposition that can optimise collection of energy in a series of cells with decreasing band gap stacked on top of each other. Quantum dot materials, in which Si quantum dots (QDs) are embedded in a dielectric matrix, offer the potential to tune the effective band gap, through quantum confinement, and allow fabrication of optimised tandem solar cell devices in one growth run in a thin-film process. Such cells can be fabricated by sputtering of thin layers of silicon rich oxide sandwiched between a stoichiometric oxide that on annealing crystallise to form Si QDs of uniform and controllable size. For approximately 2-nm diameter QDs, these result in an effective band gap of 1.8 eV. Introduction of phosphorous or boron during the growth of the multilayers results in doping and a rectifying junction, which demonstrates photovoltaic behaviour with an open circuit voltage (VOC) of almost 500 mV. However, the doping behaviour of P and B in these QD materials is not well understood. A modified modulation doping model for the doping mechanisms in these materials is discussed which relies on doping of a sub-oxide region around the Si QDs.
A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Hong Shen,Riyi Yang,Jian Zhou,Zhiyuan Yu,Ming Lu,Yuxiang Zheng,Rongjun Zhang,Liangyao Chen,Wan-Sheng Su,Songyou Wang

DOI: https://doi.org/10.1039/d2cp01400a

IF: 3.3

2022-06-21

Physical Chemistry Chemical Physics

Abstract:Direct-band silicon materials have been a sought-after material for potential applications in silicon photonics and solar cells. Accordingly, methodologies like nanostructure engineering, alloy engineering and strain engineering have been developed. In this work, the particle swarm optimization (PSO) algorithm is used to design direct-band Si-Ge alloys. The findings of phonon computations demonstrate that all these structures are dynamically stable. In addition, ab initio molecular dynamics and elastic constant calculations are carried out, with results indicating these structures are thermodynamically stable at 300 K as well as being mechanically stable. All of these materials exhibit semiconductor behavior with band gaps of 1.03, 0.68 and 1.37 eV for α, β and γ phases, respectively, at the HSE06 level. The results of effective mass and mobility of carriers that are important in applications show that holes are more easily transported in all structures but that the higher concentration of holes, the lower the carried mobility. Different concentrations of holes n_h lead to different limits to the scattering process. When n_h is lower than the value of around 〖10〗^16 cm^(-3), deformation potential scattering is dominant, while the ionized impurity scattering process limits overall mobility when n_h is higher than such a value. Finally, the absorption spectra display that both α and β phases have isotropic optical properties in the X- and Y- directions while strong anisotropy can be seen in the Z-direction. However, the γ phase exhibits no notable isotropy. This investigation finds three direct-band and potentially CMOS compatible materials, which will benefit the development of high efficiency emitter or solar cells.

chemistry, physical,physics, atomic, molecular & chemical
Dipole-Allowed Direct Band Gap Silicon Superlattices

Young Jun Oh,In-Ho Lee,Sunghyun Kim,Jooyoung Lee,K. J. Chang

DOI: https://doi.org/10.48550/arXiv.1504.04134

2015-04-16

Abstract:Silicon is the most popular material used in electronic devices. However, its poor optical properties owing to its indirect band gap nature limit its usage in optoelectronic devices. Here we present the discovery of super-stable pure-silicon superlattice structures that can serve as promising materials for solar cell applications and can lead to the realization of pure Si-based optoelectronic devices. The structures are almost identical to that of bulk Si except that defective layers are intercalated in the diamond lattice. The superlattices exhibit dipole-allowed direct band gaps as well as indirect band gaps, providing ideal conditions for the investigation of a direct-to-indirect band gap transition. The transition can be understood in terms of a novel conduction band originating from defective layers, an overlap between the valence- and conduction-band edge states at the interface layers, and zone folding with quantum confinement effects on the conduction band of non-defective bulk-like Si. The fact that almost all structural portions of the superlattices originate from bulk Si warrants their stability and good lattice matching with bulk Si. Through first-principles molecular dynamics simulations, we confirmed their thermal stability and propose a possible method to synthesize the defective layer through wafer bonding.

Materials Science
A Review on Metastable Silicon Allotropes

Linlin Fan,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.3390/ma14143964

IF: 3.4

2021-01-01

Materials

Abstract:Diamond cubic silicon is widely used for electronic applications, integrated circuits, and photovoltaics, due to its high abundance, nontoxicity, and outstanding physicochemical properties. However, it is a semiconductor with an indirect band gap, depriving its further development. Fortunately, other polymorphs of silicon have been discovered successfully, and new functional allotropes are continuing to emerge, some of which are even stable in ambient conditions and could form the basis for the next revolution in electronics, stored energy, and optoelectronics. Such structures can lead to some excellent features, including a wide range of direct or quasi-direct band gaps allowed efficient for photoelectric conversion (examples include Si-III and Si-IV), as well as a smaller volume expansion as lithium-battery anode material (such as Si-24, Si-46, and Si-136). This review aims to give a detailed overview of these exciting new properties and routes for the synthesis of novel Si allotropes. Lastly, the key problems and the developmental trends are put forward at the end of this article.
Discovery of Novel Silicon Allotropes with Optimized Band Gaps to Enhance Solar Cell Efficiency through Evolutionary Algorithms and Machine Learning

Mostafa Yaghoobi,Mojtaba Alaei,Mahtab Shirazi,Nafise Rezaei,Stefano de Gironcoli

2024-08-02

Abstract:In the pursuit of advancing solar energy technologies, this study presents 20 direct and quasi-direct band gap silicon crystalline semiconductors that satisfy the Shockley-Queisser limit, a benchmark for solar cell efficiency. Employing two evolutionary algorithm-based searches, we optimize structures and calculate fitness function using the DFTB method and Gaussian approximation potential. Following the preselection of structures based on energy considerations, we further optimize them using PBEsol DFT. Subsequently, we screen the structures based on their band gap, employing a DFTB method tailored for band gap calculation of silicon crystals. To ensure accurate band gap determination, we employ HSE and GW methods. To validate the structural stability, we employ phonon analysis via linear regression algorithm applied to PBEsol DFT data. Significantly, the structures unveiled in this study are of great importance due to their proven stability from both mechanical and dynamic perspectives. Furthermore, the ductility and low density of certain structures enhance their potential application. We examine the optical properties by studying the imaginary part of the dielectric function by solving the Bethe-Salpeter Equation on top of GW approximation. By calculating the SLME, we achieve an efficiency of 32.7% for Si$_{22}$ at a thickness of 500 nm. Moreover, the study harnesses various machine learning algorithms to develop a predictive model for the band gap energy of these silicon structures. Input data for machine learning models are derived from structural MBTR and SOAP descriptors, as well as DFT outputs. Notably, the results reveal that features extracted from DFT outperform the MBTR and SOAP descriptors.

Materials Science,Computational Physics
Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach

H. J. Xiang,Bing Huang,Erjun Kan,Su-Huai Wei,X. G. Gong

DOI: https://doi.org/10.1103/PhysRevLett.110.118702

2012-11-03

Abstract:Diamond silicon (Si) is the leading material in current solar cell market. However, diamond Si is an indirect band gap semiconductor with a large energy difference (2.4 eV) between the direct gap and the indirect gap, which makes it an inefficient absorber of light. In this work, we develop a novel inverse-band structure design approach based on the particle swarming optimization algorithm to predict the metastable Si phases with better optical properties than diamond Si. Using our new method, we predict a cubic Si20 phase with quasi-direct gaps of 1.55 eV, which is a promising candidate for making thin-film solar cells.

Materials Science
Helium Incorporation Stabilized Direct-gap Silicides

Shicong Ding,Jingming Shi,Jiahao Xie,Wenwen Cui,Pan Zhang,Kang Yang,Jian Hao,Meiling Xu,Qingxin Zeng,Lijun Zhang,Yinwei Li

DOI: https://doi.org/10.48550/arXiv.2006.06319

2020-06-11

Abstract:The search of direct-gap Si-based semiconductors is of great interest due to the potential application in many technologically relevant fields. This work examines the incorporation of He as a possible route to form a direct band gap in Si. Structure predictions and first-principles calculations have shown that He reacts with Si at high pressure, to form the stable compounds Si2He and Si3He. Both compounds have host-guest structures consisting of a channel-like Si host framework filled with He guest atoms. The Si frameworks in two compounds could be persisted to ambient pressure after removal of He, forming two pure Si allotropes. Both Si-He compounds and both Si allotropes exhibit direct or quasi-direct band gaps of 0.84-1.34 eV, close to the optimal value (~1.3 eV) for solar cell applications. Analysis shows that Si2He with an electric-dipole-transition allowed band gap possesses higher absorption capacity than diamond cubic Si, which makes it to be a promising candidate material for thin-film solar cell.

Materials Science
Constructing Ultra-Shallow Near-Edge States for Efficient and Stable Perovskite Solar Cells

Xueliang Zhu,Wenqi Xiong,Chong Hu,Kangwei Mo,Man Yang,Yanyan Li,Ruiming Li,Chen Shen,Yong Liu,Xiaoze Liu,Sheng Wang,Qianqian Lin,Shengjun Yuan,Zhengyou Liu,Zhiping Wang

DOI: https://doi.org/10.1002/adma.202309487

IF: 29.4

2024-01-01

Advanced Materials

Abstract:Electronic band structure engineering of metal-halide perovskites (MHP) lies at the core of fundamental materials research and photovoltaic applications. However, reconfiguring the band structures in MHP for optimized electronic properties remains challenging. This article reports a generic strategy for constructing near-edge states to improve carrier properties, leading to enhanced device performances. The near-edge states are designed around the valence band edge using theoretical prediction and constructed through tailored material engineering. These states are experimentally revealed with activation energies of around 23 milli-electron volts by temperature-dependent time-resolved spectroscopy. Such small activation energies enable prolonged carrier lifetime with efficient carrier transition dynamics and low non-radiative recombination losses, as corroborated by the millisecond lifetimes of microwave conductivity. By constructing near-edge states in positive-intrinsic-negative inverted cells, a champion efficiency of 25.4% (25.0% certified) for a 0.07-cm2 cell and 23.6% (22.7% certified) for a 1-cm2 cell is achieved. The most stable encapsulated cell retains 90% of its initial efficiency after 1100 h of maximum power point tracking under one sun illumination (100 mW cm-2) at 65 degrees C in ambient air. Efficient doping of hybrid perovskites holds the potential to further advance solar cell efficiency. This study presents a generic strategy for perovskite doping by constructing ultra-shallow near-edge states. These states can effectively prolong electron-hole recombination through efficient trap and de-trap processes, resulting in over 25% efficiency in inverted perovskite solar cells with superior long-term operational stability.image
Low-energy silicon allotropes with strong absorption in the visible for photovoltaic applications

Silvana Botti,José A. Flores-Livas,Maximilian Amsler,Stefan Goedecker,Miguel A. L. Marques

DOI: https://doi.org/10.1103/physrevb.86.121204

IF: 3.7

2012-09-27

Physical Review B

Abstract:We present state-of-the-art first-principles calculations of the electronic and optical properties of silicon allotropes with interesting characteristics for applications in thin-film solar cells. These new phases consist of distorted sp3 silicon networks and have a lower formation energy than other experimentally produced silicon phases. Some of these structures turned out to have quasidirect and dipole-allowed band gaps in the range 0.8–1.5 eV, and to display absorption coefficients comparable with those of chalcopyrites used in thin-film record solar cells.

physics, condensed matter, applied,materials science, multidisciplinary
New Layered II–III–VI Semiconductors: Promising Materials for High Performance Solar Cells

Di Zhang,Bing Wang,Yu Gan,Jian Zhou,Zhimei Sun

DOI: https://doi.org/10.1021/acs.jpcc.3c07113

2024-01-17

The Journal of Physical Chemistry C

Abstract:Searching for materials with outstanding electronic and optical properties is of great importance for optoelectronic applications. Here, by means of high-throughput ab initio calculations, we have identified a new class of 18 layered semiconducting II–III–VI (II = Be, Mg, Ca, Sr, Ba; III = B, Al, Ga, In; VI = S, Se, Te) compounds exhibiting remarkable photovoltaic performance for the conversion of solar energy. These novel ternary compounds are predicted to show robust thermodynamic, mechanical, dynamical, and thermal stability. Importantly, at a film thickness of 2 μm, the top six direct-bandgap semiconductors show high photovoltaic conversion efficiencies of 28.7–31.6%, comparable to the currently most efficient single-junction solar cell GaAs (29.1%). Such remarkable photovoltaic performance is attributed to the optimal electronic bandgaps (1.00–1.35 eV), strong visible-light absorption coefficients (104–105 cm–1), small carrier effective masses (≤0.26m 0), favorable carrier mobilities (145.5–569.7 cm2/(V s)), and moderate exciton binding energies (≤113.2 meV). Moreover, the electronic band structures of the indirect-bandgap semiconductors can be tuned by strain engineering, resulting in an indirect-to-direct-bandgap transition. This work not only predicts several new semiconductors with high photovoltaic performance but also offers a design strategy to explore various functional materials.

chemistry, physical,nanoscience & nanotechnology,materials science, multidisciplinary
fvs-Si48: a direct bandgap silicon allotrope

Menglei Hu,Ziao Wang,Yanheng Xu,Jiechun Liang,Jiagen Li,Xi Zhu

DOI: https://doi.org/10.1039/c8cp03165g

2018-11-07

Abstract:A structurally stable silicon allotrope is predicted by means of first principles calculations. This new structure is composed of a six-membered ring, a five-membered ring and a three-membered ring with the space group PA3[combining macron] and fvs topology, which is named fvs-Si48. The calculations of geometrical, vibrational, and electronic and optical properties reveal that fvs-Si48 has good mechanical stability with a mass density of 1.86 g cm-3. More importantly, it is a semiconductor with a direct band gap of 2.15 eV. From the analysis of its optical properties, there is the possibility of its synthesis in theory. This fvs-Si48 could have a wide range of applications in photo catalysts, optoelectronics, hydrogen storage and aerospace engineering.
Identifying Direct Bandgap Silicon Structures with High-throughput Search and Machine Learning Methods

Rui Wang,Hongyu Yu,Yang Zhong,Hongjun Xiang

2024-07-03

Abstract:Utilizations of silicon-based luminescent devices are restricted by the indirect-gap nature of diamond silicon. In this study, the high-throughput method is employed to expedite discoveries of direct-gap silicon crystals. The machine learning (ML) potential is utilized to construct a dataset comprising 2637 silicon allotropes, which is subsequently screened using an ML Hamiltonian model and density functional theory calculations, resulting in identification of 47 direct-gap Si structures. We calculate transition dipole moments (TDM), energies, and phonon bandstructures of these structures to validate their performance. Additionally, we recalculate bandgaps of these structures employing the HSE06 functional. 22 silicon allotropes are identified as potential photovoltaic materials. Among them, the energy per atom of Si22-Pm, which has a direct bandgap of 1.27 eV, is 0.026 eV/atom higher than diamond silicon. Si18-C2/m, which has a direct bandgap of 0.796 eV, exhibits the highest TDM among identified structures. Si16-P21/c, which has a direct bandgap of 0.907 eV, has the mass density of 2.316 g/cm3, which is the highest among identified structures and higher than that of diamond silicon. The structure Si12-P1, which possesses a direct bandgap of 1.69 eV, exhibits the highest spectroscopic limited maximum efficiency (SLME) among identified structures at 32.28%, surpassing that of diamond silicon. This study offers insights into properties of silicon crystals while presenting a systematic high-throughput method for material discovery.

Materials Science,Computational Physics
Low-density silicon allotropes for photovoltaic applications

Maximilian Amsler,Silvana Botti,Miguel A. L. Marques,Thomas J. Lenosky,Stefan Goedecker

DOI: https://doi.org/10.1103/physrevb.92.014101

IF: 3.7

2015-07-01

Physical Review B

Abstract:Silicon materials play a key role in many technologically relevant fields, ranging from the electronic to the photovoltaic industry. A systematic search for silicon allotropes was performed by employing a modified ab initio minima hopping crystal structure prediction method. The algorithm was optimized to specifically investigate the hitherto barely explored low-density regime of the silicon phase diagram by imitating the guest-host concept of clathrate compounds. In total, 44 metastable phases are presented, of which 11 exhibit direct or quasidirect band gaps in the range of ≈1.0–1.8 eV, close to the optimal Shockley-Queisser limit of ≈1.4 eV, with a stronger overlap of the absorption spectra with the solar spectrum compared to conventional diamond silicon. Due to the structural resemblance to known clathrate compounds it is expected that the predicted phases can be synthesized.

physics, condensed matter, applied,materials science, multidisciplinary
Sub-1.4eV bandgap inorganic perovskite solar cells with long-term stability

Mingyu Hu,Min Chen,Peijun Guo,Hua Zhou,Junjing Deng,Yudong Yao,Yi Jiang,Jue Gong,Zhenghong Dai,Yunxuan Zhou,Feng Qian,Xiaoyu Chong,Jing Feng,Richard D. Schaller,Kai Zhu,Nitin P. Padture,Yuanyuan Zhou

DOI: https://doi.org/10.1038/s41467-019-13908-6

IF: 16.6

2020-01-09

Nature Communications

Abstract:Abstract State-of-the-art halide perovskite solar cells have bandgaps larger than 1.45 eV, which restricts their potential for realizing the Shockley-Queisser limit. Previous search for low-bandgap (1.2 to 1.4 eV) halide perovskites has resulted in several candidates, but all are hybrid organic-inorganic compositions, raising potential concern regarding device stability. Here we show the promise of an inorganic low-bandgap (1.38 eV) CsPb 0.6 Sn 0.4 I 3 perovskite stabilized via interface functionalization. Device efficiency up to 13.37% is demonstrated. The device shows high operational stability under one-sun-intensity illumination, with T 80 and T 70 lifetimes of 653 h and 1045 h, respectively ( T 80 and T 70 represent efficiency decays to 80% and 70% of the initial value, respectively), and long-term shelf stability under nitrogen atmosphere. Controlled exposure of the device to ambient atmosphere during a long-term (1000 h) test does not degrade the efficiency. These findings point to a promising direction for achieving low-bandgap perovskite solar cells with high stability.

multidisciplinary sciences
CsCu5Se3: A Copper-Rich Ternary Chalcogenide Semiconductor with Nearly Direct Band Gap for Photovoltaic Application

Zhiguo Xia,Huajing Fang,Xiuwen Zhang,Maxim S. Molokeev,Romain Gautier,Qingfeng Yan,Su-Huai Wei,Kenneth R. Poeppelmeier

DOI: https://doi.org/10.1021/acs.chemmater.7b05104

IF: 10.508

2018-01-01

Chemistry of Materials

Abstract:Discovery of new semiconductor candidates with suitable band gaps is a challenge for optoelectronic application. A facile solvothermal synthesis of a new ternary chalcogenide semiconductor CsCu5Se3 is reported. The telluride CsCu5Te3 is also predicted to be stable. CsCu5Se3 is isostructural with CsCu5S3 (space group Pmma). The band gap calculations of these chalcogenide semiconductors using hybrid density functional theory indicate nearly direct band gaps, and their values (about 1.4 eV) were confirmed by the optical absorption spectroscopy. These alkali metal copper chalcogenides are interesting examples of copper-rich structures which are commonly associated with favorable photovoltaic application.
Sb 2 TeSe 2 Monolayers: Promising 2D Semiconductors for Highly Efficient Excitonic Solar Cells

Chun Wang,Yu Jing,Xiaocheng Zhou,Ya-fei Li

DOI: https://doi.org/10.1021/acsomega.1c02746

IF: 4.1

2021-07-27

ACS Omega

Abstract:On the basis of density functional theory computations, we demonstrated that two-dimensional (2D) α- and β-Sb2TeSe2 monolayers are promising candidates for constructing high-efficiency heterojunction excitonic solar cells. These two 2D materials possess moderate band gaps (∼1.1 eV), which can be flexibly tuned by applying external strains. They possess high carrier mobility (∼3000 cm2 V–1 s–1) and can absorb sunlight over the whole range of the solar spectrum. Remarkably, the α- and β-Sb2TeSe2 monolayers can form desirable type II heterostructures with HfSe2 and BiOI monolayers, respectively. The power conversion efficiencies of α-Sb2TeSe2/HfSe2 and β-Sb2TeSe2/BiOI heterojunction excitonic solar cells can reach 22.5 and 20.3%, respectively. Since α-Sb2TeSe2 and β-Sb2TeSe2 monolayers have good stability and high synthesis feasibility, they have important applications in photovoltaic solar cell devices.This article has not yet been cited by other publications.

chemistry, multidisciplinary

Direct and quasi-direct band gap silicon allotropes with remarkable stability

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties.

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Si Solid-State Quantum Dot-Based Materials for Tandem Solar Cells.

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Dipole-Allowed Direct Band Gap Silicon Superlattices

A Review on Metastable Silicon Allotropes

Discovery of Novel Silicon Allotropes with Optimized Band Gaps to Enhance Solar Cell Efficiency through Evolutionary Algorithms and Machine Learning

Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach

Helium Incorporation Stabilized Direct-gap Silicides

Constructing Ultra-Shallow Near-Edge States for Efficient and Stable Perovskite Solar Cells

Low-energy silicon allotropes with strong absorption in the visible for photovoltaic applications

New Layered II–III–VI Semiconductors: Promising Materials for High Performance Solar Cells

fvs-Si48: a direct bandgap silicon allotrope

Identifying Direct Bandgap Silicon Structures with High-throughput Search and Machine Learning Methods

Low-density silicon allotropes for photovoltaic applications

Sub-1.4eV bandgap inorganic perovskite solar cells with long-term stability

CsCu5Se3: A Copper-Rich Ternary Chalcogenide Semiconductor with Nearly Direct Band Gap for Photovoltaic Application

Sb 2 TeSe 2 Monolayers: Promising 2D Semiconductors for Highly Efficient Excitonic Solar Cells