Abstract:Silicon plays an important role in the mordern photovoltaic and semiconductive industry. In addition, it also arouses great interest in the scientific research due to its structural variety. In experiment, more than thirteen silicon allotropes have been prepared through high pressure or chemical method. Meanwhile, various new silicon structures have been proposed theoretically. The structural variety leads to various electronic properties, including semiconductivity with different band gaps, metallicity, and superconductivity. These electronic properties have a close relationship with the silicon atomic coordination. For example, silicon allotropes with merely four coordinated atoms usually exhibit semiconductive property, while silicon structures with higher coordination number would show metallicity or superconductivity. Thus far, all the synthesized metastable silicon allotropes are composed of four coordinated atoms. Silicon allotropes with higher coordination numbers are mainly high pressure phases which could not be quenched to the ambient condition. One might wonder whether there would be possibility for the preparation of metastable metallic silicon structures. In this paper, a new metallic metastable silicon allotrope has been proposed theoretically using the particle swarm optimization method. This structure was also found when removing the La atoms in α-LaSi5. Its stability was verified by calculating its elastic constants and phonon spectrum. It might be achieved by removing the La atoms from the α-LaSi5 precursor, which is analogous with the recent preparation of Si24. The tunnel-like voids in this structure lead to its lower density than that of the Si-I phase. There are 40% five coordinated silicon atoms, wheras the others are four coordinated. Since silicon has four valence electrons, sp3 hybridized four connected silicon just satisfy the octet rule and would show semiconductivity. The change of coordination number results in a charge transfer between different atoms as indicated by the atomic population. Five connected silicon atoms need more electrons to bonding with other atoms. Electronic band structure calculation indicated that this structure possess metallic property. The metallicity might be due to the delocalization of valence electrons which is induced by the existence of five coordinated atoms. The chemical bonding in this structure includes covalency, metallicity, and ionicity.

Theoretical prediction of a novel hexagonal narrow-gap silicon allotrope under high pressures

Tuning of electronic and optical properties of a predicted silicon allotrope: Hexagonal silicon h 10 -Si

A New Metastable Metallic Silicon Allotrope

Silicon Framework-Based Lithium Silicides at High Pressures

Crystal Structures of Silicon-Rich Lithium Silicides at High Pressure

Structures and absorption optical spectra of silicon cluster Si 9 via first-principles calculations

Dumbbell Silicene: A Strain-Induced Room Temperature Quantum Spin Hall Insulator

Low-density silicon allotropes for photovoltaic applications

Prediction of the Rb-Si compounds under high pressure

A Review on Metastable Silicon Allotropes

Density functional predictions of new silicon allotropes: Electronic properties and potential applications to Li-battery anode materials

A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties.

fvs-Si48: a direct bandgap silicon allotrope

A new superconducting open-framework allotrope of silicon at ambient pressure

Stable Porous Crystalline Silicon with Nanotubular Structure: A Predicted Allotrope with Direct Band Gap

Metastable C-centered Orthorhombic Si8and Ge8

High-throughput calculation screening for new silicon allotropes with monoclinic symmetry

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Three-dimensional pentagonal silicon: Stability and properties

Predicted CsSi Compound: a Promising Material for Photovoltaic Applications

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.