Abstract:In this work, we calculate the effective thermal conductivity coefficient for a binary semiconductor heterostructure using the GaAs/AlAs superlattice as an example. Different periods of layers and different ambient temperatures are considered. At the scale under consideration, the use of models based on the Fourier law is very limited, since they do not take into account the quantum-mechanical properties of materials, which gives a strong discrepancy with experimental data. On the other hand, the use of molecular dynamics methods allows us to obtain accurate solutions, but they are significantly more demanding on computing resources and also require solving a non-trivial problem of potential selection. When considering nanostructures, good results were shown by methods based on the solution of the Boltzmann transport equation for phonons; they allow one to obtain a fairly accurate solution, while having less computational complexity than molecular dynamics methods. To calculate the thermal conductivity coefficient, a modal suppression model is used that approximates the solution of the Boltzmann transport equation for phonons. The dispersion parameters and phonon scattering parameters are obtained from first-principle calculations. The work takes into account 2-phonon (associated with isotopic disorder and barriers) and 3-phonon scattering processes. To increase the accuracy of calculations, the non-digital profile of the distribution of materials among the layers of the superlattice is taken into account. The obtained results are compared with experimental data showing good agreement.

CALCULATION OF ELECTRONIC POTENTIAL DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN A-Si:H/a-sin_x:h SUPERLATTICES

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

First Principles Calculation on Quantum Transport of Au-Si 3 -Au Nanoscale Junction

First-Principles Calculations of the Electronic Transport in Au-Si-Au Junctions

Monte Carlo Simulation of Electron Transport in Silicon Carbide

A Study of Frequency Response in Silicon Heterojunction Bipolar Transistors with Amorphous Silicon Emitters

LOCAL ELECTRONIC-STRUCTURES OF THE NATIVE DEFECTS IN MODULATION-DOPED ALAS/GAAS SUPERLATTICES

Interfacial charge transfer and Schottky barriers at c-Si/a-In heterojunctions

Local Density of States of Silicon Impurity in Lightly and Heavily Doped AlAs/GaAs Superlattices

Ab initio Calculation of the Effective Thermal Conductivity Coefficient of a Superlattice Using the Boltzmann Transport Equation

The Nature of the Si Impurity in Ultrathin AlAs/GaAs Superlattices

Calculation of the effective thermal conductivity of a superlattice based on the Boltzmann transport equation using first-principle calculations

Simulation of a high-efficiency silicon-based heterojunction solar cell

A Modelling study of Electron transport in GaN/AlGaN superlattices using Monte Carlo simulation

Band offsets and point-defect charges of the aluminum and hafnium oxides in contact with the Cu(In,Ga)Se2chalcopyrite

Study of carrier transport through GexSi1−x/Si heterojunctions by using 2D Monte Carlo simulation method

Study of Photoacoustic Spectra of Amorphous Semiconductor Superlattice Films

Interface Electronic Structure, Two-Dimensional Metallicity, and Possible Interface Superconductivity in Cucl/Si Superlattices

Electron-Structure of Transition-Metal Superlattices

AMPS modeling of light J-V characteristics of a-Si based solar cells

Amorphous Silicon Periodic and Quasi-Periodic Superlattices