Abstract:High‐performance silicon heterojunction (SHJ) solar cells use carrier‐selective contact structures based on hydrogentated amorphous Si (a‐Si:H) to maximize collection of photogenerated carriers. The high open circuit voltages observed experimentally in SHJ cells require that the carrier‐selective contacts provide selectivity and passivation. However, a microscopic understanding of the dynamics of carrier transport through the a‐Si layer is currently lacking. In this paper, we explicitly simulate the transport of holes across the a‐Si:H(i) layer using a novel kinetic Monte Carlo approach. The hole‐selective contact structure investigated in this paper uses p‐type doped a‐Si:H(p) and intrinsic a‐Si:H(i) on an n‐type crystalline silicon wafer, where the selectivity is provided by the a‐Si:H(p) and the passivation is provided by the a‐Si:H(i). However, in addition to the passivation provided by the a‐Si:H(i), this layer also creates a potential barrier to the collection of photogenerated holes. There have been experimental studies in the literature that have suggested that multi‐phonon processes are the main transport mechanism that assists in the transport of holes across the intrinsic a‐Si:H barrier. Simulations presented here show that multi‐phonon injection of holes into the a‐Si:H(i) layer is the rate limiting step for transport across the a‐Si:H(i) layer. Our results indicate that multi‐phonon transport is strongly dependent on the electric field at the a‐Si:H(i)/c‐Si heterointerface as well. Transport simulations presented in this paper are consistent with experimental findings that multi‐phonon processes limit transport across the a‐Si:H(i) layer and are responsible for photocurrent suppression at the a‐Si:H(i)/c‐Si heterointerface when these processes are slower than the associated incident hole flux due to photo‐excitation. Using a novel kinetic Monte Carlo approach, we explicitly simulate transport of holes across the a‐Si:H(i) layer in a hole selective contact for a silicon heterojunction solar cell. Our results indicate that multi‐phonon transport is strongly dependent on the electric field at the a‐Si:H(i)/c‐Si heterointerface. Transport simulations presented in this paper are consistent with experimental findings that multi‐phonon processes limit transport across the a‐Si:H(i) layer and are responsible for photocurrent suppression at the a‐Si:H(i)/c‐Si heterointerface

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A Silicon Heterojunction Bipolar Transistor with an Amorphous Silicon Emitter and a Crystalline Silicon Emitter Region

Bipolar-Transistor Action from an Amorphous Carbon/Silicon Heterojunction Emitter

Electronic Behaviour and Field Emission of A-C:H:n/si Heterojunctions

The influence of emitter-base junction design on collector saturation current, ideality factor, Early voltage, and device switching speed of Si/SiGe HBT's

Numerical analysis of heterostructure semiconductor devices

Development on Si/SiGe heterojunction bipolar transistors

Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs

Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

Simulation of a high-efficiency silicon-based heterojunction solar cell

Development of SiGe/Si Film Heterojunction Bipolar Transistors

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Simulation of band-to-band tunneling in Si/Ge and Si/Si 1-xGex heterojunctions by using Monte Carlo method

Influence of In-Situ Arsenic Doped Emitter Poly Process Conditions on RF-BiCMOS Device Parametrics

Modeling of transport in carrier‐selective contacts in silicon heterojunction solar cells

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Operation of Silicon-Germanium Heterojunction Bipolar Transistors with Different Structures at Deep Cryogenic Temperature.

Investigation of Cryogenic Current-Voltage Anomalies in SiGe HBTs: Role of Base-Emitter Junction Inhomogeneities

Models of Material Parameters for Strained Si/sub 1-X/ge/sub X/ Layers and Study of Hot-Carrier Transport and High Frequency Performance of Si/SiGe HBT

The electronic activity of boron and phosphorus impurities in a-Si and a-Si:H