AMPS modeling of light J-V characteristics of a-Si based solar cells

ZH Hu,XB Liao,HW Diao,CF Xia,L Xu,XB Zeng,XB Hao,HY Hao,GL Kong
DOI: https://doi.org/10.3321/j.issn:1000-3290.2005.05.061
IF: 0.906
2005-01-01
Acta Physica Sinica
Abstract:AMPS (Analysis of microelectronic and photonic structures) mode,which was developed by Pennsylvania State University, has been used to module the light J-V characteristics of a-Si solar cells with a structure of TCO/p-a-SiC:H/i-a-Si:H/n-a-Si:H/ metal. The effects of valence band offset and contact barriers at p/i and TOC/p, n/metal interfaces on the light J-V characteristics have been examined. The modeling has qualitatively categorized and explained the non-ideal J-V behaviors (rollover, crossover, Voc shift,and rollunder) observed in a-Si based solar cells.
What problem does this paper attempt to address?