AMPS modeling of light J-V characteristics of α-Si based solar cells

Zhihua Hu,Xianbo Liao,Hongwei Diao,Chaofeng Xia,Ling Xu,Xiangbo Zeng,Huiying Hao,GuangLin Kong
DOI: https://doi.org/10.7498/aps.54.2302
2005-01-01
Abstract:AMPS (Analysis of microelectronic and photonic structures) mode, which was developed by Pennsylvania State Univ., has been used to module the light J-V characteristics of α-Si solar cells with a structure of TCO/p-α-SiC:H/i-α-Si:H/n-α-Si:H/metal. The effects of valence band offset and contact barriers at p/i and TOC/p,n/metal interfaces on the light J-V characteristics have been examined. The modeling has qualitatively categorized and explained the non-ideal J-V behaviors (rollover, crossover, Voc shift, and rollunder) observed in α-Si based solar cells.
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