Abstract:Solar cells (SCs) that contain elaborate nanostructures, such as quantum dots and quantum wells, have been rigorously investigated as a way to harvest a wide range of the solar spectrum [1]. However, the energy conversion efficiency of those SCs still remains low. For the further improvement of the device performance, a much deeper understanding of the role of nanostructures in the photovoltaic conversion process is essential to gain the effective design criteria. To achieve this, local electronic properties including electrical potential, energy states, and charge distribution around the excitation centers have to be characterized under light irradiation since they govern the behavior of excited carriers. These properties have so far been indirectly deduced from macroscopic characterization such as current-voltage (I-V) measurement; however, it is not sufficient to clarify rather complicated roles of the nanostructures [2]. Thus, a direct measurement of those properties with high spatial resolution is required to understand the detailed mechanisms of the photovoltaic conversion process. To this end, we have been developing a platform for performing scanning tunneling microscopy/spectroscopy (STM/STS), atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM) working under light irradiation conditions.Here, we outline the characterization of a multiple quantum well (QW) SC based on III-V compounds that is expected to be a potential candidate of intermediate band type SC. First, we show the electrical potential measurements along the p-i-n junction of the SC using KPFM in air. Measurements were performed in open and short circuit configurations under light irradiation conditions [Fig.1]. We demonstrate that the dependence of the open circuit voltage on the intensity of light can be successfully measured by careful interpretation of the KPFM data. Second, we introduce some examples of the atomic scale characterization of the multiple QW using ultrahigh vacuum STM including the atomic arrangement, electronic states, and band profile. Also, charge accumulation at the QW is discussed based on the topographic measurement under light irradiation.jmicro;63/suppl_1/i12/DFU042F1F1DFU042F1Fig. 1.(a) Schematic illustration of measurement system of KPFM in air. (b) Effect of light irradiation on potential profile in open circuit configuration.

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