Abstract:We have made a comprehensive photoluminescence (PL) study of the low lying conduction band states of (GaAs)m/(AlAs)n type-II short-period superlattices (SL) with m, n ⩽ 4, in order to determine their energy and symmetry. The symmetry is found from the shift and splitting of the levels under uniaxial stress, and from the no-phonon oscillator strengths determined by time-resolved PL. Our samples are found to be true superlattices obeying the optical selection rules predicted by the space group symmetry, which determines whether a transition is indirect or pseudo-direct. However, selection rules depending on parity with respect to reflection in the growth plane are not obeyed. The results are compared with theoretical calculations from the literature. When strain due to lattice mismatch is taken into account, the ordering of the levels is found to agree with the most recent calculations, except for the case m = n = 1. In this SL the lowest conduction band state is found to derive from the bulk X valley, rather than from the L valley as predicted. We confirm that this discrepancy can be resolved if there is an ordered interchange of a certain fraction of the Ga and Al atoms, and our data support the theoretical prediction that such an ordered intermixed SL may in fact be more stable than either the perfect SL or the random alloy.

Optical Properties of GaAs/AlAs Superlattices with Randomly Distributed Layer Thicknesses.

Mixing of Subbands in GaAs/AlAs Superlattices with Randomly Distributed Layer Thicknesses.

Optical Properties of Ordered and Randomly Disordered AlAs/GaAs Short-Period Superlattices.

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Tunneling in Quantum-Wire Superlattices with Random Layer Thicknesses

Electronic States in GaAs-AlAs Lateral-Surface Superlattices Produced by Deposition of AlAs and GaAs Fractional Layers on (001) Vicinal GaAs Substrates

Optical Properties of Δ-Doped GaAs and GaAs/Al 0.1 Ga 0.9 As Superlattices

Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices

Effects of stacking periodicity on the electronic and optical properties of GaAs/AlAs superlattice: a first-principles study

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Effect of Randomness in Layer Thickness on the Phonon Structure of Superlattices

Electronic states and optical properties of GaAs/AlAs and GaAs/vacuum superlattices by the linear combination of bulk bands method

Valence Band Structures of Gaas/Alas Lateral Superlattices

Electronic states in GaAs/AlAs lateral-surface superlattices

Electronic Structures of Gaas/Alas Lateral Superlattices

Electronic states in GaAs-AlAs short-period superlattices: energy levels and symmetry

Effect of Layer-Thickness Randomness on Gap Solitons and Optical Bistability in Nonlinear Superlattices with Photonic Stop Gaps

Infrared Optical Absorptions in Corrugated Lateral Surface Superlattices

Local Density of States of Silicon Impurity in Lightly and Heavily Doped AlAs/GaAs Superlattices

Intrasubband Plasmons And Optical-Transmission In Random-Layer-Thickness N-I-P-I Semiconductor Superlattices

Electronic Properties of Linear Compositions of Two Binary Compounds with Random Layer Thicknesses