Abstract:The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically their position in the structure. The quantitative determination of the positions of subsurface dopant atoms is an important issue in a range of applications from channel doping in ultra-scaled transistors to quantum information processing, and hence poses a significant challenge. Here, we establish a metrology combining low-temperature scanning tunnelling microscopy (STM) imaging and a comprehensive quantum treatment of the dopant-STM system to pin-point the exact lattice-site location of sub-surface dopants in silicon. The technique is underpinned by the observation that STM images of sub surface dopants typically contain many atomic-sized features in ordered patterns, which are highly sensitive to the details of the STM tip orbital and the absolute lattice-site position of the dopant atom itself. We demonstrate the technique on two types of dopant samples in silicon -- the first where phosphorus dopants are placed with high precision, and a second containing randomly placed arsenic dopants. Based on the quantitative agreement between STM measurements and multi-million-atom calculations, the precise lattice site of these dopants is determined, demonstrating that the metrology works to depths of about 36 lattice planes. The ability to uniquely determine the exact positions of sub-surface dopants down to depths of 5 nm will provide critical knowledge in the design and optimisation of nanoscale devices for both classical and quantum computing applications.

Atomic-scale Imaging of Dopant Atoms in Si-doped GaN

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Characterizations on the Doping of Single-Crystal Silicon Carbide

Towards quantification of doping in gallium arsenide nanostructures by low‐energy scanning electron microscopy and conductive atomic force microscopy

Dopant-defect interactions and their impact on local crystal stoichiometry studies in Mg-doped GaN via atom probe tomography

Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory

X-ray absorption near edge spectroscopy with a superconducting detector for nitrogen dopants in SiC

Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy

Imaging interstitial atoms with multislice electron ptychography

Atomic scale mechanism of β to γ phase transformation in gallium oxide

Toward Accurate Composition Analysis of GaN and AlGaN Using Atom Probe Tomography

Dopant concentration effects on Si$_{1-x}$Ge$_{x}$ crystals for emerging light-source technologies: A molecular dynamics study

Direct Detection of Rare Earth Ion Distributions in Gallium Nitride and Its Influence on Growth Morphology

Influence of Doping on the Two-Dimensional Electron Gas Distribution in Algan/Gan Heterostructure Transistors

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

Distant Entanglement of Macroscopic Gas Samples

Distributions of conduction electrons as manifested in MAS NMR of gallium nitride.