Abstract:This work examines the carbon defects associated with recently reported and novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon ($^{12}C$) doping in the range of concentrations from $3.2*10^{17}$ to $3.5*10^{19} cm^{-3}$. 14 unique vibrational modes of defects are observed in GaN samples grown by hydride vapor phase epitaxy (HVPE) and then compared with defect properties predicted from first-principles calculations. The vibrational frequency shift in two $^{13}C$ enriched samples related to the effect of the isotope mass indicates six distinct configurations of the carbon-containing point defects. The effect of the isotope replacement is well reproduced by the density functional theory (DFT) calculations. Specific attention is paid to the most pronounced defects, namely tri-carbon complexes($C_N=C=C_N$) and carbon substituting for nitrogen $C_N$. The position of the transition level (+/0) in the bandgap found for $C_N=C=C_N$ defects by DFT at 1.1 eV above the valence band maximum, suggest that $(C_N=C=C_N)^+$ provides compensation of ${C_N}^-$. $C_N=C=C_N$ defects are observed to be prominent, yet have high formation energies in DFT calculations. Regarding ${C_N}$ defects, it is shown that the host Ga and N atoms are involved in the defect's delocalized vibrations and significantly affect the isotopic frequency shift. Much more faint vibrational modes are found from di-atomic carbon-carbon and carbon-hydrogen (C-H) complexes. Also, we note changes of vibrational mode intensities of $C_N$, $C_N=C=C_N$, C-H, and $C_N-C_i$ defects in the IR absorption spectra upon irradiation in the defect-related UV/visible absorption range. Finally, it is demonstrated that the resonant enhancement of the Raman process in the range of defect absorption above 2.5 eV enables the detection of defects at carbon doping concentrations as low as $3.2*10^{17} cm^{-3}$.

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Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

Spin polarisation and non-isotropic effective mass in the conduction band of GdN

Computational investigation of the electronic and optical properties of planar Ga-doped Graphene

Atomic-scale Imaging of Dopant Atoms in Si-doped GaN

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Direct Detection of Rare Earth Ion Distributions in Gallium Nitride and Its Influence on Growth Morphology

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures

Self-Doped p-n Junction with High Carrier Concentration in 2D GaN/MoSSe Heterostructures: A First-Principles Study

Fingerprints of carbon defects in vibrational spectra of gallium nitride (GaN) consider-ing the isotope effect

Puzzle Of Non-Surface Related 2d Electron Gas In N-Inn Epitaxial Samples

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN.

Electron transport mechanism in gallium nitride

Geometry-induced electron doping in periodic semiconductor nanostructures

Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

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Using ground state and excited state density functional theory to decipher 3d dopant defects in GaN