Abstract:Recently, new quantum features have been observed and studied in the area of nanostructured layers. Nanograting on the surface of the thin layer imposes additional boundary conditions on the electron wave function and induces G-doping or geometry doping. G-doping is equivalent to donor doping from the point of view of the increase in electron concentration n. However, there are no ionized impurities. This preserves charge carrier scattering to the intrinsic semiconductor level and increases carrier mobility with respect to the donor-doped layer. G-doping involves electron confinement to the nanograting layer. Here, we investigate the system of multiple nanograting layers forming a series of hetero- or homojunctions. The system includes main and barrier layers. In the case of heterojunctions, both types of layers were G-doped. In the case of homojunctions, main layers were G-doped and barrier layers were donor-doped. In such systems, the dependence of n on layer geometry and material parameters was analysed. Si and GaAs homojunctions and GaAs/AlGaAs, Si/SiGe, GaInP/AlGAs, and InP/InAlAs heterojunctions were studied. G-doping levels of 10^18-10^19 cm^-3 were obtained in homojunctions and type II heterojunctions. High G-doping levels were attained only when the difference between band gap values was low.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to improve the electrical properties of periodic semiconductor nanostructures by increasing the electron concentration and Fermi level through geometric - induced electron doping (G - doping). Specifically: 1. **Introduction of geometric - induced electron doping (G - doping)**: Different from traditional ion doping, G - doping restricts the electron wave function by applying additional boundary conditions through nanogratings (NG) to increase the electron concentration in the conduction band. This process does not involve ionized impurities, so carrier scattering can be maintained at the intrinsic semiconductor level and carrier mobility can be improved. 2. **Research on multi - layer nanograting structures**: The paper explores heterojunction or homojunction systems composed of multiple nanograting layers. For heterojunctions, both the main layer and the barrier layer are G - doped; for homojunctions, the main layer is G - doped while the barrier layer is traditionally doped. The research analyzes the dependence of the electron concentration \(n\) and the Fermi level \(E_F\) on the layer geometry and material parameters in these structures. 3. **Achievement of high G - doping levels**: The paper shows how to achieve G - doping levels as high as \(10^{18}-10^{19}\, \text{cm}^{-3}\) under specific conditions. In particular, when the band - gap difference is small, it is easier to obtain a high G - doping level. 4. **Application prospects**: G - doping is attractive in high - mobility applications, such as multi - junction solar cells. Since G - doping does not involve ionized impurities, it can significantly improve electron mobility and thus improve device performance. ### Formula summary - **DOS reduction formula**: \[ \rho(E)=G\cdot\rho_0(E) \] where \(G > 1\) is the geometric factor and \(\rho_0(E)\) is the DOS in the reference well. - **Number of rejected electrons**: \[ r_n=\int_{E_{\text{con}}}^{\infty}\left(1-\frac{1}{G}\right)\rho_0(E)\,dE \] - **Fermi level calculation**: \[ E_F=\left[\frac{\hbar^2}{2m^*}\left(\frac{3\pi^2n}{V}\right)^{2/3}\right]+E_C \] - **Non - linear equation solution**: \[ 0 = \alpha\left(\frac{E_{bi}^{(b)}}{k_BT}\right)\exp\left(-\frac{E_{bi}^{(b)}-E_{bi}^{(m)}+\Delta E_V}{k_BT}\right)-\left(G_b - 1\right)\left(G_m - 1\right) \] Through these studies, the paper aims to reveal the potential of geometric - induced electron doping in nanostructures and provide a theoretical basis for the design of future high - performance semiconductor devices.

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