Abstract:We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 $\mu$m thick $\beta$-Ga$_2$O$_3$ films with electron concentrations in the 10$^{15}$ cm$^{-3}$ range and record-high room temperature Hall electron mobilities of up to 200 cm$^2$/V.s, reaching the predicted theoretical maximum room temperature mobility value for $\beta$-Ga$_2$O$_3$. Growth of the homoepitaxial films was performed on Fe-doped (010) $\beta$-Ga$_2$O$_3$ substrates at a growth rate of 1.9 $\mu$m/hr using TEGa as the Gallium precursor. To probe the background electron concentration, an unintentionally doped film was grown with a Hall concentration of 3.43 x 10$^{15}$ cm$^{-3}$ and Hall mobility of 196 cm$^2$/V.s. Growth of intentionally Si-Doped films was accomplished by fixing all growth conditions and varying only the silane flow, with controllable Hall electron concentrations ranging from 4.38 x 10$^{15}$ cm$^{-3}$ to 8.30 x 10$^{15}$ cm$^{-3}$ and exceptional Hall mobilities ranging from 194 - 200 cm$^2$/V.s demonstrated. C-V measurements showed a flat charge profile with the N$_D^+$ - N$_A^-$ values correlating well with the Hall-measured electron concentration in the films. SIMS measurements showed the silicon atomic concentration matched the Hall electron concentration with Carbon and Hydrogen below detection limit in the films. The Hall, C-V, and SIMS data indicate the growth of high-quality 4.5 $\mu$m thick $\beta$-Ga$_2$O$_3$ films and controllable doping into the mid 10$^{15}$ cm$^{-3}$ range. These results demonstrate MOCVD growth of electronics grade record-high mobility, low carrier density, and thick $\beta$-Ga$_2$O$_3$ drift layers for next generation vertical $\beta$-Ga$_2$O$_3$ power devices.

[Preparation of the monoclonal antibodies against human BORIS and the expression pattern of BORIS in normal and diseased human mammary tissues].

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Ge doping of α-Ga2O3 thin films via mist chemical vapor deposition and their application in Schottky barrier diodes

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Computational Fermi level engineering and doping-type conversion of Ga2O3 via three-step synthesis process

Doping Si, Mg and Ca into GaN based on plasma stimulated room-temperature diffusion

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Superconductivity in hyperdoped Ge by molecular beam epitaxy

In situ doping of epitaxial diamond with germanium by microwave plasma CVD in GeH4-CH4-H2 mixtures with optical emission spectroscopy monitoring

N-type doping of LPCVD-grown \b{eta}-Ga2O3 thin films using solid-source germanium

Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties

Geometry-induced electron doping in periodic semiconductor nanostructures

Selective CVD of germanium on silicon and its applications

Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping