Superconductivity in hyperdoped Ge by molecular beam epitaxy

Patrick J. Strohbeen,Aurelia M. Brook,Wendy L. Sarney,Javad Shabani
DOI: https://doi.org/10.1063/5.0157509
2023-09-05
Abstract:Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been great deal of progress in hyperdoping of Ga doped Ge using ion implantation. The thin film growths would be advantageous allowing homoepitaxy of doped and undoped Ge films opening possibilities for vertical Josephson junctions. Here, we present our studies on the growth of one layer of hyperdoped superconducting germanium thin film via molecular beam epitaxy. We observe a fragile superconducting phase which is extremely sensitive to processing conditions and can easily phase-segregate, forming a percolated network of pure gallium metal. By suppressing phase segregation through temperature control we find a superconducting phase that is unique and appears coherent to the underlying Ge substrate.
Mesoscale and Nanoscale Physics,Superconductivity
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to grow hyper - doped germanium (Ge) films through Molecular Beam Epitaxy (MBE) technology to achieve its superconductivity and study how to suppress the separation of gallium (Ga) from the germanium matrix during high - temperature annealing. Specifically: 1. **Achieving superconductivity**: Researchers hope to introduce a high - concentration of gallium doping in germanium by using MBE technology, thereby achieving superconductivity. Superconducting germanium films have potential application values in low - temperature electronics and qubits and other fields. 2. **Suppressing phase separation**: In previous studies, when using high - energy synthesis techniques such as ion implantation, it was found that gallium would separate from the germanium matrix after high - temperature treatment, forming pure gallium metal droplets, resulting in unstable superconducting properties. Therefore, this paper attempts to suppress this phase - separation phenomenon by controlling the growth conditions, thereby obtaining a more stable and uniform superconducting phase. 3. **Optimizing the growth method**: The paper proposes two different growth methods (Method A and Method B) and compares their effects. Method A uses high - temperature annealing, while Method B does not perform annealing treatment, aiming to explore the influence of different treatment conditions on superconducting properties. 4. **Increasing the superconducting transition temperature \(T_c\)**: By alloying silicon (Si) into the hyper - doped layer, it is expected to increase the average phonon frequency \(\omega_{\text{ln}}\) of the system, and then increase the superconducting transition temperature \(T_c\) according to the McMillan formula (see formula 1). \[ T_c=\frac{\omega_{\text{ln}}}{1.2k_B}\exp\left[-\frac{1.04(1 + \lambda_{\text{ep}})}{\lambda_{\text{ep}}-\mu^*(1 + 0.62\lambda_{\text{ep}})}\right] \tag{1} \] Among them: - \(\lambda_{\text{ep}}\) is the electron - phonon coupling parameter, - \(\mu^*\) is the screened retarded Coulomb repulsion parameter, - \(k_B\) is the Boltzmann constant. Through these efforts, researchers hope to develop high - quality superconducting materials that are compatible with existing semiconductor processes, providing support for future low - temperature CMOS circuits and qubit architectures.