Abstract:Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical conductivity is thought to be by the hopping mechanism through localized states. The carrier mobility of these materials is usually very low, in the order of ~10^-3 - 10^-2 cm^2/(Vs) at room temperature. In this study, we present the Hall effect characterization of a-Ge prepared by self-ion implantation of Ge ions. The a-Ge prepared by this method is highly homogenous and has a mass density within 98.5% of the crystalline Ge. The material exhibits an exceptionally high electrical conductivity and carrier mobility (~100 cm^2/(Vs)) for an amorphous semiconductor. The temperature-dependent resistivity of the material is very-well defined with two distinctive regions, extrinsic and intrinsic conductivity, as in crystalline Ge. These results are direct evidence for a largely-preserved band structure and non-localized states of the valence band in a-Ge, as proposed by Tauc et al. from optical characterization alone. This finding is not only significant for the understanding of electrical conductivity in covalent disordered semiconductors, but the exceptionally high mobility we have observed in amorphous Ge opens up device applications not previously considered for amorphous semiconductors.

Electronic structure of superconducting gallium-doped germanium from ab-initio calculations

Electron-phonon Coupling in Gallium-Doped Germanium

Superconductivity of $β$-Gallium

Observation of Distinct Superconducting Phases in Hyperdoped p-type Germanium

Computational investigation of the electronic and optical properties of planar Ga-doped Graphene

Superconductivity in Mo5GeB2 with a Tetragonal Structure

Suppression of A Possible Spin-Density Wave Transition in Cr2gan by Ge Doping

Superconductivity in hyperdoped Ge by molecular beam epitaxy

Study of electronic, optical, thermodynamic, and thermoelectric properties of GeC bulk and monolayer structure

Non-localized states and high hole mobility in amorphous germanium

Superconductivity and unexpected chemistry of germanium hydrides under pressure

First-principles calculations of optoelectronic and thermoelectric properties of semiconducting germanium chalcogenide

Metal-Insulator Transition in Homogeneously Doped Germanium

Electronic structure of the heavy-fermion superconductor Ce2Ni3Ge5 and its reference Ce2Ni3Si5 compound by ab initio calculations

Theoretical investigation of the phonon spectrum and the lattice thermal conductivity in GeTe.

First-principles calculations of the band gap and optical properties of germanium sulfide

Electronic structural critique of interesting thermal and optical properties of C$_{17}$Ge germagraphene

Unusual structure and properties of germanium under pressure

Stability and electronic properties of two-dimensional gallium

Structural Phase Transition and Superconductivity in 2H-BaGaGe with Buckled Honeycomb Layers

Thermal Expansion of Germanium Isotopes at Low Temperature