Abstract:The massive amount of wasted heat energy from industry has pushed the development of thermoelectric (TE) materials that directly convert heat into electricity to a new level of concern. Recently, multicomponent alloys such as GeTe-based and PbSe-based high-entropy (HE) chalcogenides have attracted a great deal of attention due to their potential application as TE materials. The nature of the interatomic bonding, lattice distortion (LD), and the electronic structure in this class of materials is not fully understood. Herein, we report a comprehensive computational investigation of nine GeTe-based HE alloys with eight metallic elements (Ag, Pb, Sb, Bi, Cu, Cd, Mn, and Sn) with large supercells of 1080 atoms each; seven PbSe-based HE solid solutions: Pb0.99−ySb0.012SnySe1−2xTexSx (x = 0.1, 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, with y = 0) with supercells of 1000 atoms each; and five Pb0.99−ySb0.012SnySe1−2xTexSx (y = 0.05, 0.1, 0.15, 0.2, 0.25 with x = 0.25) solid solutions with supercells of 1000 atoms each. All these HE models are theoretically investigated for the first time. The electronic structure, interatomic bonding, charge transfer, and lattice distortion (LD) are investigated by first-principles calculations based on density functional theory. Multicomponent HE alloys can cause a significant LD, which affects their mechanical, thermal, and TE properties. The calculations for the GeTe-based HE chalcogenides showed that they are semiconductors with a narrow bandgap, except for m8, which has a semi-metallic characteristic, and this makes them good candidates for TE applications. For most of these models, the Fermi level shifts upward and locates deeply in the conduction bands, resulting in the enhancement of the electrical conductivity (σ). The bonding properties showed that most bonds in m5 are more dispersed, indicating highest LD and lower lattice thermal conductivity. For PbSe-based HE solid solutions, the LD calculations showed that the models Pb0.99Sb0.012Se0.5Te0.25S0.25 and Pb0.89Sb0.012Sn0.1Se0.5Te0.25S0.25 have the higher LD, and thus a lower lattice thermal conductivity. Such investigations are in high demand since it enables us to design new HE chalcogenides for TE applications. We use the novel concept of total bond order density as a single quantum mechanical metric to characterize the internal cohesion of these HE alloys and correlate with calculated properties, especially the mechanical properties. This work provides a solid database for HE chalcogenides and a road map for many potential applications. Moreover, the computational procedure we developed can be used to design new HE chalcogenides for specific TE applications.

First-principles calculations of optoelectronic and thermoelectric properties of semiconducting germanium chalcogenide

First-Principles Calculations of Thermoelectric Transport Properties of Quaternary and Ternary Bulk Chalcogenide Crystals

Microstructures and Thermoelectric Properties of GeSbTe Based Layered Compounds

Electronic, optical and thermal properties of the hexagonal and fcc Ge2Sb2Te5 chalcogenide from first-principle calculations

Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications

First-Principles Calculations of Thermoelectric Properties of IV–VI Chalcogenides 2D Materials

Computational insights into structural, electronic, optical and thermoelectric features of ternary chalcogenide Ca 2 GeX 4 (X=S, Se, Te) compounds

First principle investigation of structural, electronic, optical and thermoelectric properties of Chalcogenide Sr2GeX4(X=S, Se)

First-principles calculations of the band gap and optical properties of germanium sulfide

Insights into Optoelectronic, Thermodynamic, and Thermoelectric properties of novel GePtCh (Ch = S, Se, Te) semiconductors: First-principles perspective

First-principles investigation of InAgASe 4 (A = Ge, Sn) quaternary chalcogenides: Unveiling electronic, optical, and thermoelectric features

First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound

First-principles calculations of electronic, optical and thermoelectric properties of the Ge 2 SeS/GeSe van der Waals heterostructure

First-principles study of the electronic structure, optical, thermodynamic, and thermoelectric nature in MgACu3Se4 (A = Sc, Y) semiconductors

Superior thermoelectric properties of ternary chalcogenides CsAg5Q3 (Q = Te, Se) predicted using first-principles calculations

Theoretical investigation of the phonon spectrum and the lattice thermal conductivity in GeTe.

Theoretical study of structural, electronic, optical, thermoelectric and photovoltaic properties of chalcopyrite semiconductors AgGaTe2 and AgGaSe2 compounds for photocatalytic CO2 reduction

First Principles Study of Optoelectronic and Thermoelectric Aspects of Novel Zintl Phase SrAg 2 X 2 (X = S, Se, Te) Alloys for Green Energy Applications.

First-principles calculation of lattice distortion, electronic structure, and bonding properties of GeTe-based and PbSe-based high-entropy chalcogenides

Optoelectronic and transport properties of Fe2TiGe with the Tran-Blaha modified Becke-Johnson potential

Study of electronic, optical, thermodynamic, and thermoelectric properties of GeC bulk and monolayer structure