Abstract:Thermoelectric energy conversion is an all solid-state technique offering high reliability and power density, desirable properties in mobile waste heat recovery applications. It is generally less efficient than vapor-based thermodynamic cycles. The efficiency of thermoelectric (TE) power generators and heat pumps is characterized by the thermoelectric figure of merit zT = S2σT/κ; here S is the thermopower or Seebeck coefficient of the TE material, κ and σ = 1/ρ are its thermal and electrical conductivities (ρ is the resitivity). Recent research led to a doubling of zT over the last decade. Featuring lattice thermal conductivities intrinsically limited by very strong phonon-phonon interactions to the amorphous limit,[1] small band gaps[2–4] and interesting transport properties,[2,5] some ternary I–V–VI2 intermetallic compounds like AgSbTe2 can reach a thermoelectric figure of merit zT ∼ 1.3 at 400 K[6] when doped p-type. Its alloys with GeTe, called “TAGS”,[7–9] and with PbTe, called “LAST”,[10] are the materials that have some of the highest known zT near 500–800 K, the temperature of automotive exhaust where heat recovery applications are being envisioned. Here we complement the work on AgSbTe2-PbTe and AgSbTe2-GeTe and report the first systematic study of the thermoelectric properties of AgSbTe2SnTe alloys covering the entire alloy range. This goes beyond early work[7,11] concentrated on the SnTe-rich side, and mixed alloys of SnTe, PbTe and AgSbTe2, “LASTT”.[12,13] In large-scale energy recovery applications, SnTe-based alloys would avoid lead-abatement legislation, the technological problems associated with a crystallographic phase transition in GeTe-based alloys, and the very high cost of Ge. The high zT of p-type AgSbTe2 stems from the large density of states (DOS) of the valence band[2] and the intrinsically ultralow thermal conductivity,[1] but it is difficult to dope AgSbTe2 sufficiently to get a good zT. Binary SnTe is plagued by the existence of an irreducible concentration of Sn vacancies which makes it impossible to reach a low hole concentration. Here we

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First principle investigation of structural, electronic, optical and thermoelectric properties of Chalcogenide Sr2GeX4(X=S, Se)

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First-principles investigation of InAgASe 4 (A = Ge, Sn) quaternary chalcogenides: Unveiling electronic, optical, and thermoelectric features

First-principles study of potassium-based novel chalcogenide materials for optoelectronic and thermoelectric devices

First-principles investigation of structural, electronic and thermoelectric properties of SmMg2X2 (X = P, As, Sb, Bi) zintl compounds

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Investigation of the lead-free double perovskites Cs2AgSbX6 (X= Cl, Br, I) for optoelectronic and thermoelectric applications

Investigation of the Thermal-to-Electrical Properties of Transition Metal-Sb Alloys Synthesized for Thermoelectric Applications

First-Principles Calculations of Thermoelectric Transport Properties of Quaternary and Ternary Bulk Chalcogenide Crystals

Study of electronic, mechanical, thermodynamic, optical, and thermoelectric properties of CdLa 2 X 4 (X = S, Se, Te) chalcogenides for solar cells and energy applications

Computational analysis of AlXSnSe 4 (X = Ag and Cu) quaternary compounds: Uncovering first-principles insights into electronic structure, optical, and thermoelectric nature

First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound

High‐Entropy Cubic Pseudo‐Ternary Ag 2 (S, Se, Te) Materials With Excellent Ductility and Thermoelectric Performance

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SnTe–AgSbTe2 Thermoelectric Alloys