SnTe–AgSbTe2 Thermoelectric Alloys

Yi Chen,Michele D. Nielsen,Yi-Bin Gao,Tie-Jun Zhu,Xinbing Zhao,Joseph P. Heremans
DOI: https://doi.org/10.1002/aenm.201100460
IF: 27.8
2011-01-01
Advanced Energy Materials
Abstract:Thermoelectric energy conversion is an all solid-state technique offering high reliability and power density, desirable properties in mobile waste heat recovery applications. It is generally less efficient than vapor-based thermodynamic cycles. The efficiency of thermoelectric (TE) power generators and heat pumps is characterized by the thermoelectric figure of merit zT = S2σT/κ; here S is the thermopower or Seebeck coefficient of the TE material, κ and σ = 1/ρ are its thermal and electrical conductivities (ρ is the resitivity). Recent research led to a doubling of zT over the last decade. Featuring lattice thermal conductivities intrinsically limited by very strong phonon-phonon interactions to the amorphous limit,[1] small band gaps[2–4] and interesting transport properties,[2,5] some ternary I–V–VI2 intermetallic compounds like AgSbTe2 can reach a thermoelectric figure of merit zT ∼ 1.3 at 400 K[6] when doped p-type. Its alloys with GeTe, called “TAGS”,[7–9] and with PbTe, called “LAST”,[10] are the materials that have some of the highest known zT near 500–800 K, the temperature of automotive exhaust where heat recovery applications are being envisioned. Here we complement the work on AgSbTe2-PbTe and AgSbTe2-GeTe and report the first systematic study of the thermoelectric properties of AgSbTe2SnTe alloys covering the entire alloy range. This goes beyond early work[7,11] concentrated on the SnTe-rich side, and mixed alloys of SnTe, PbTe and AgSbTe2, “LASTT”.[12,13] In large-scale energy recovery applications, SnTe-based alloys would avoid lead-abatement legislation, the technological problems associated with a crystallographic phase transition in GeTe-based alloys, and the very high cost of Ge. The high zT of p-type AgSbTe2 stems from the large density of states (DOS) of the valence band[2] and the intrinsically ultralow thermal conductivity,[1] but it is difficult to dope AgSbTe2 sufficiently to get a good zT. Binary SnTe is plagued by the existence of an irreducible concentration of Sn vacancies which makes it impossible to reach a low hole concentration. Here we
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