Abstract:Thermoelectric energy conversion is an all solid-state technique offering high reliability and power density, desirable properties in mobile waste heat recovery applications. It is generally less efficient than vapor-based thermodynamic cycles. The efficiency of thermoelectric (TE) power generators and heat pumps is characterized by the thermoelectric figure of merit zT = S2σT/κ; here S is the thermopower or Seebeck coefficient of the TE material, κ and σ = 1/ρ are its thermal and electrical conductivities (ρ is the resitivity). Recent research led to a doubling of zT over the last decade. Featuring lattice thermal conductivities intrinsically limited by very strong phonon-phonon interactions to the amorphous limit,[1] small band gaps[2–4] and interesting transport properties,[2,5] some ternary I–V–VI2 intermetallic compounds like AgSbTe2 can reach a thermoelectric figure of merit zT ∼ 1.3 at 400 K[6] when doped p-type. Its alloys with GeTe, called “TAGS”,[7–9] and with PbTe, called “LAST”,[10] are the materials that have some of the highest known zT near 500–800 K, the temperature of automotive exhaust where heat recovery applications are being envisioned. Here we complement the work on AgSbTe2-PbTe and AgSbTe2-GeTe and report the first systematic study of the thermoelectric properties of AgSbTe2SnTe alloys covering the entire alloy range. This goes beyond early work[7,11] concentrated on the SnTe-rich side, and mixed alloys of SnTe, PbTe and AgSbTe2, “LASTT”.[12,13] In large-scale energy recovery applications, SnTe-based alloys would avoid lead-abatement legislation, the technological problems associated with a crystallographic phase transition in GeTe-based alloys, and the very high cost of Ge. The high zT of p-type AgSbTe2 stems from the large density of states (DOS) of the valence band[2] and the intrinsically ultralow thermal conductivity,[1] but it is difficult to dope AgSbTe2 sufficiently to get a good zT. Binary SnTe is plagued by the existence of an irreducible concentration of Sn vacancies which makes it impossible to reach a low hole concentration. Here we

Thermoelectric properties of (GeTe)1-x[(Ag2Te)0.4(Sb2Te3)0.6]x alloys

Transport properties and valence band feature of high-performance (GeTe)85(AgSbTe2)15 thermoelectric materials

Thermoelectric Properties of Non-Stoichiometric Agsbte2 Based Alloys with A Small Amount of Gete Addition

Transport properties and valence band feature of high-performance (GeTe)<sub>85</sub>(AgSbTe<sub>2</sub>)<sub>15</sub>thermoelectric materials

Effect of Ag/Sb Ratio on the Thermoelectric Properties of (gete) 85 (Agysb2-Yte3-y)15 TAGS Alloys

Nanostructures in High-Performance (Gete)(x)(agsbte(2))(100-X) Thermoelectric Materials

Ioffe-Regel Limit And Lattice Thermal Conductivity Reduction Of High Performance (Agsbte2)(15)(Gete)(85) Thermoelectric Materials

SnTe–AgSbTe2 Thermoelectric Alloys

High-Performance (Ag x SbTe x /2+1.5 ) 15 (GeTe) 85 Thermoelectric Materials Prepared by Melt Spinning

Optimized Carrier Concentration and Enhanced Thermoelectric Properties in GeSb4-xBixTe7 Materials

Thermoelectric Properties of Ag Doped Pseudo-binary Alloys (PbTe)1-x(SnTe)x

Thermoelectric Properties of Ag-doped N-Type (bi2te3)0.9–(bi2−xagxse3)0.1 (x=0–0.4) Alloys Prepared by Spark Plasma Sintering

All Cubic-Phase Δ-Tags Thermoelectrics over the Entire Mid-Temperature Range.

Enhancing the Thermoelectric Performance of GeSb4Te7 Compounds via Alloying Se

Anionic regulation and valence band convergence boosting the thermoelectric performance of Se-alloyed GeSb 2 Te 4 single crystal

Rare-Earth Nd Inducing Record-High Thermoelectric Performance of (GeTe)(85)(AgSbTe2)(15)

Enhancing thermoelectric performance in GeTe through Ge enrichment regulation and AgCuTe alloying

Phase-modulated mechanical and thermoelectric properties of Ag2S1-xTex ductile semiconductors

Band convergence and nanostructure modulations lead to high thermoelectric performance in SnPb0.04Te-y% AgSbTe2

Co-alloying of Sn and Te enables high thermoelectric performance in Ag9GaSe6

Dual Alloying Enables High Thermoelectric Performance in AgSbTe2 by Manipulating Carrier Transport Behavior