Abstract:The low Seebeck coefficient and the high thermal conductivity deteriorate the thermoelectric properties of GeTe. Herein, the Seebeck coefficient is enhanced by promoting band convergency induced by the strongly correlated d, f electrons of rare earth elements. The doping of Pb and Bi causes avoided crossing and hierarchical structure, strengthening the full‐spectrum scattering of phonons and decelerating the sound velocity. As a highly promising thermoelectric material in the mid‐temperature region, pristine GeTe shows deteriorated thermoelectric properties due to the low Seebeck coefficient and the intrinsic high thermal conductivity. Herein, it is discovered that the introduction of strongly correlated d, f electrons by alloying rare‐earth atoms at Ge sites will increase the band effective mass and promote band convergency, which can largely improve the electric transport property. Moreover, the heavy atoms (Pb, Bi) doping induces optical phonon softening and the avoided crossing between acoustic and optical phonon branches, decelerating both optical and acoustic phonon velocities. The modulated composition wave from the fluctuated multi‐component distribution introduces a complicated hierarchical structure including point defects and nanoprecipitates, which provides all‐scale scattering sources for heat‐carrying phonons and results in low lattice thermal conductivity. Consequently, a high zT of 2.4 at 800 K can be obtained in the Ge0.86Pb0.09Bi0.03Ce0.005Te sample due to the combination of strong correlation for d, f electrons and the full‐spectrum scattering for phonons. This work provides an effective strategy to increase the thermoelectric performance of IV–VI compounds by combining the modulated band structure and the softening phonon dispersion.

Rare-Earth Nd Inducing Record-High Thermoelectric Performance of (GeTe)(85)(AgSbTe2)(15)

Transport properties and valence band feature of high-performance (GeTe)85(AgSbTe2)15 thermoelectric materials

Transport properties and valence band feature of high-performance (GeTe)<sub>85</sub>(AgSbTe<sub>2</sub>)<sub>15</sub>thermoelectric materials

Nanostructures in High-Performance (Gete)(x)(agsbte(2))(100-X) Thermoelectric Materials

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys Via Introducing Cu2Te Nanocrystals and Resonant Level Doping.

Enhanced near-room-temperature thermoelectric performance in GeTe

Enhancing thermoelectric performance in GeTe through Ge enrichment regulation and AgCuTe alloying

High-Performance (Ag x SbTe x /2+1.5 ) 15 (GeTe) 85 Thermoelectric Materials Prepared by Melt Spinning

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu 2 Te Nanocrystals and Resonant Level Doping

Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

Tailoring band structure and Ge precipitates through Er and Sb/Bi co-doping to realize high thermoelectric performance in GeTe

Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

The effect of rare earth element doping on thermoelectric properties of GeTe

Simultaneous Suppression of Phonon Transport and Carrier Concentration for Efficient Rhombohedral GeTe Thermoelectric

Ultralow Lattice Thermal Conductivity and Superhigh Thermoelectric Figure‐of‐Merit in (Mg, Bi) Co‐Doped GeTe

Optimizing Electronic Quality Factor toward High-Performance Ge<sub>1-</sub><i><sub>x</sub></i><sub>-</sub><i><sub>y</sub></i>Ta<i><s ub>x</sub></i>Sb<i><sub>y</sub></i>Te Thermoelectrics: The Role of Transition Metal Doping

Thermoelectric properties of (GeTe)1-x[(Ag2Te)0.4(Sb2Te3)0.6]x alloys

High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains

Origin of the High Performance in GeTe-Based Thermoelectric Materials Upon Bi2Te3 Doping

Modulating the Valence of Ga and the Deep Level Impurity for High Thermoelectric Performance of N-Type Pb0.98Ga0.02Te1-xSex Compounds

Optimizing Electronic Quality Factor toward High‐Performance Ge 1− x − y Ta x Sb y Te Thermoelectrics: The Role of Transition Metal Doping