Abstract:In this study, the ground state physical properties of Hg-based chalcopyrite semiconductors, HgXN 2 (X = Si, Ge and Sn ), are investigated using the density functional theory (DFT), which is based on full potential linearized augmented plane wave (FP-LAPW) method. The structural, electronic, optical, mechanical and thermal properties of the body-centered tetragonal (BTC) phase, HgXN 2 (X = Si, Ge and Sn), have been calculated using the modified Becke-Johnson exchange-correlation potential (TB-mBJ). The obtained lattice parameters and volume are in good agreement with the values reported earlier, indicating that the results are reliable and reproducible. The phase stability of the titled compounds is elaborately studied and it is confirmed that all are thermodynamically, dynamically and mechanically stable. The electronic band structure demonstrated a direct band gap of 1.70 eV, 0.99 eV, and 0.94 eV for the HgXN 2 (X = Si, Ge and Sn) compounds, respectively. Both HgGeN 2 and HgSnN 2 compounds have a notably lighter carrier effective mass, resulting in higher carrier mobility and conductivity than HgSiN 2 . The order of the mechanical hardness is as follows: HgSiN 2 > HgGeN 2 > HgSnN 2 . The studied materials are also anisotropic in mechanically and optically. All the title compounds exhibit ductile behavior. The charge density contour plots indicates the dominant covalent nature of the bonds in HgXN 2 (X = Si, Ge and Sn). All these compounds have a high absorption coefficient and low optical reflectivity in the visible light range. Due to the favorable band gap and high absorption coefficient, these compounds could be suitable for optoelectronic or photovoltaic device applications. Moreover, the thermal expansion coefficient, thermal conductivity , melting point and fracture toughness behavior have been calculated, which also showed promise for thermal barrier coating (TBC) applications.

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