The enhanced optoelectronic, and thermoelectric nature of novel KXCuS 3 (X = Zr, Hf) semiconductors: An inclusive ab-initio study

Muhammad Salman Khan,Banat Gul,Ghlamallah Benabdellah,Gulzar Khan,Bashir Ahmad,Saikh Mohammad Wabaidur,Ammar M. Tighezza,Hijaz Ahmad
DOI: https://doi.org/10.1016/j.ijleo.2024.171660
IF: 3.1
2024-02-04
Optik
Abstract:The remarkable optoelectronic characteristics of chalcogenides with a quaternary structure have provoked considerable interest, notably due to their potential employment in solar energy conversions. Here we focused on the interaction of light and transport features in novel KXCuS 3 (X = Zr, Hf) semiconductors. The calculations involved have employed cutting-edge computational technique that is based on density functional theory. The band profiles results demonstrate that the investigated systems possess direct energy gaps. The Cu-d states contributes mostly in the valence band region. Likewise, the linear optical features were calculated and discussed for the potential employment of the studied materials in the optoelectronic applications. Beyond the low frequency, the real part of dielectric constant increases as photon energy increases. Due to the higher energy of the involved states, the electronic transition in these materials possess a higher absorption probability, and as photon energy increases, so does the absorption coefficient. At shorter wavelengths, the refractive indices have an inverse association with extinction coefficients. The significant thermoelectric features too are projected and their remarkable outcomes were deliberated, signifying the compounds as suitable for the thermoelectric devices. The results be significant in expanding the development of resourceful optoelectronics devices and broadening their specific real-world applications.
optics
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