Investigating novel Mo2X3S (X = Se, Te) materials: Probing the Influence of Chalcogen Substitution on Electronic, Optical, and Thermoelectric Properties

Abdelhay Salah Mohamed,Banat Gul,Muhammad Salman Khan,Hijaz Ahmad,Mohd Khalid Awang,Faheem Abbas
DOI: https://doi.org/10.1088/1402-4896/ad7420
2024-08-30
Physica Scripta
Abstract:The excellent thermal performance and adjustable optoelectronic characteristics distinguish the ternary semiconductors. Using the state-of-the-art density functional theory, the electronic, optical, and thermoelectric characteristics of novel Mo2X3S (X = Se, Te) ternary chalcogenides are studied. The predicted band gap values with TB-mBJ for Mo2Se3S and Mo2Te3S materials were 1.41 eV and 2.10 eV, respectively. For their possible employment in optoelectronic applications, the components of the complex dielectric function and the vital optical characteristics were calculated and studied. For an increase in the band gap and with the replacement of Se to Te, the peaks in ε1(ω) shifted to higher energies. Mo2Se3S and Mo2Te3S both show stronger absorption in the UV and visible ranges. Based on the observed peaks in the reflection spectrum, they may used as ultraviolet-reflecting materials with good efficacy. Both Mo2Se3S and Mo2Te3S have positive Seebeck coefficient values, they exhibit p-type conduction. The Mo2Te3S material displays a maximum Seebeck coefficient at about 500 K compared to Mo2Se3S, which leads to a maximum ZT.
physics, multidisciplinary
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