First-principles calculations of electronic, optical and thermoelectric properties of the Ge 2 SeS/GeSe van der Waals heterostructure

Hamza Rghioui,Mohamed Said Zyane,Adil Marjaoui,Mohamed Ait Tamerd,Mustapha Diani,Mohamed Zanouni

DOI: https://doi.org/10.1016/j.physe.2024.115985

2024-05-06

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:In this research, we systematically investigate the electronic structure, optical and thermoelectric properties of the Ge 2 SeS/GeSe van der Waals (vdW) heterostructure in comparison to the Ge 2 SeS and GeSe monolayers by using density functional theory (DFT) implemented in Quantum ESPRESSO. We have constructed two configurations of the Ge 2 SeS/GeSe heterostructure by stacking the Ge 2 SeS monolayer on top of the GeSe monolayer (Stacking A 1 and A 2 ). According to our calculations, the calculated indirect electronic band gaps of both Stacking A 1 and Stacking A 2 are E g = 0.80 eV and 0.88 eV, respectively. The transfer of charges from the Ge 2 SeS to the GeSe monolayer for both configurations has been predicted. By Bader charge analysis, the charge transfers for Stacking A 1 and A 2 are approximately 0.013 e and 0.020 e, respectively. The coefficient of absorption for the Ge 2 SeS/GeSe heterostructure is higher than that for Ge 2 SeS and GeSe monolayers in both regions of the spectrum (visible, and UV). Moreover, the Ge 2 SeS/GeSe heterostructure has a very good absorbing capability of light in the visible region up to 85 × 10 4 cm −1 . Our calculations yielded a high thermoelectrical electronic figure of merit (ZT e ) of 12.64 and 2.27 for Stacking A 1 and A 2 , respectively. As a result, our findings show that the Ge 2 SeS/GeSe heterostructure is a promising material for thermoelectric and optoelectronic applications.

physics, condensed matter,nanoscience & nanotechnology