Abstract:Tungsten diselenide (WSe2), a typical semiconducting transition metal dichalcogenides (TMDs), have recently emerged as a promising two-dimensional (2D) material for potential applications in electronic and optoelectronic devices. Extraordinary physical phenomena such as valley Hall effect, valley Zeeman effect, thickness-dependent band structures have been discovered recently in TMDs mainly through optical characterizations. The intrinsic transport characteristics of TMDs, however, have not been well studied because of extrinsic factors such as the electrode contact problems and charged traps in TMD devices. These problems are also reflected by the low carrier mobility in WSe2 (the highest mobility so far reported is about 600 cm2/V s). Here, we demonstrate a new kind of van der Waals heterostructure which consists of a few-layer WSe2 encapsulated between insulating hexagonal boron nitride (h-BN) sheets. High-quality Ohmic contacts at low temperatures are achieved between the metal electrodes and WSe2 based on a selective etching process for h-BN, and the electrode contact resistance is in the range of 0.2-0.5 k{\Omega}{\mu}m which is sufficiently low for detecting the intrinsic transport properties of few-layer WSe2 and its quantum oscillations. Because of clean interfaces between h-BN and WSe2, BN/WSe2/BN heterostructured devices show ultrahigh field-effect mobility (up to 6236 cm2/V s) at low temperatures. The high quality of the BN/WSe2/BN devices is further verified by the high electron mobility extracted from Hall-effect measurements (over 4200 cm2/V s), metal-insulator transitions at low carrier density (in the order of 1011 cm-2) and interesting features of Shubnikov-der Haas (SdH) oscillations.

Versatile van der Waals heterostructures of γ-GeSe with h-BN/graphene/MoS2

Versatile van der Waals Heterostructures of Gamma-GeSe with h-BN/Graphene/MoS2

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

A van der Waals pn heterojunction with organic/inorganic semiconductors

Highly modulated dual semimetal and semiconducting γ-GeSe with strain engineering

Unveiling Versatile Electronic Properties and Contact Features of Metal-Semiconductor Graphene/γ-Ge2SSe van der Waals Heterostructures

Ultra‐Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances

Vertical and Bidirectional Heterostructures from Graphyne and MSe2 (M = Mo, W)

Modulation of Semiconductor Doping of 2D GeSe in H-Bn/gese Van Der Waals Heterostructure

Tunable Electronic Properties of GeSe/phosphorene Heterostructure from First-Principles Study

2D SnSe-based Vdw Heterojunctions: Tuning the Schottky Barrier by Reducing Fermi Level Pinning.

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

Geometric, electronic, and optical properties of MoS 2 /WSSe van der Waals heterojunctions: a first-principles study

Graphene/g-GeC Bilayer Heterostructure: Modulated Electronic Properties and Interface Contact Via External Vertical Strains and Electric Fileds

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

High-quality BN/WSe2/BN heterostructure and its quantum oscillations

Ohmic contact in graphene/SnSe2 Van Der Waals heterostructures and its device performance from ab initio simulation

Anisotropic interfacial properties of monolayer GeSe—metal contacts

Tunable Electronic Properties and Giant Spontaneous Polarization in Graphene/Monolayer GeS Van Der Waals Heterostructure

Two-Dimensional Gase/Mose2 Misfit Bilayer Heterojunctions by Van Der Waals Epitaxy

Graphene/GeTe Van Der Waals Heterostructure: Functional Schottky Device with Modulated Schottky Barriers Via External Strain and Electric Field