Abstract:Two-dimensional (2D) van der Waals (vdW) materials with lower symmetry (triclinic, monoclinic or orthorhombic) exhibit intrinsic anisotropic in-plane structure desirable for future optoelectronic surface operating devices. Herein, we report one such material, 2D $p$-type semiconductor germanium sulfide (GeS), a group IV monochalcogenide with puckered orthorhombic morphology, in which in-plane optical and transport properties can be correlated with its electronic structure. We systematically investigate the electronic band structure of the bulk GeS with micro-focused angle-resolved photoemission spectroscopy ($\mu$-ARPES) and correspond the charge transport properties using the field-effect transistor (FET) device architecture, and optical anisotropy $via$ angle-resolved polarization dependent Raman spectroscopy (ARPRS) on a micron-sized rectangle-shaped exfoliated bulk flake. The experimental valence band dispersion along the two high symmetry directions indicate highly anisotropic in-plane behavior of the charge carrier that agrees well with the density functional theory (DFT) calculations. In addition, we demonstrate the variation of the in-plane hole mobility (ratio $\sim$ 3.4) from the electrical conductivity with gate-sweep in a GeS-on-SiO$_2$ FET. Moreover, we use the angle-resolved fluctuation of the Raman intensity of the characteristic phonon modes to precisely determine the armchair and zigzag edges of the particular flake. The unique structural motif of GeS with correlated electronic and optical properties are of great interest both for the physical understanding of the all-optical switch and their applications in memory devices.

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Unraveling electronic structure of GeS through ARPES and its correlation with anisotropic optical and transport behavior

On the Structural Stability and Optical Properties of Germanium-based Schwarzites: A Density Functional Theory Investigation

Computational investigation of the electronic and optical properties of planar Ga-doped Graphene

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Unexpected Band Gap Evolution and High Carrier Mobility Sparked by the Orbital Variation in Two-Dimensional GaGeX (X = S, Se, Te)

Tunable band gap and enhanced thermoelectric performance of tetragonal Germanene under bias voltage and chemical doping

Investigation of anisotropic mechanical, electronic, and charge carrier transport properties of germanium-pnictogen monolayers

Unveiling the distinctive mechanical and thermal properties of γ-GeSe

Prediction of novel ground-state structures and analysis of phonon transport in two-dimensional GexSy compounds

A Detailed Study on the Electronic and Optical Properties of Germanium Nanotubes

Computational Insights into Structural, Electronic, Optical and Thermoelectric Features of Ternary Chalcogenide Ca2gex4 (X=S, Se, Te) Compounds

Optical Properties of Orthorhombic Germanium Sulfide: Unveiling the Anisotropic Nature of Wannier Excitons.

Efficient Band Gap Engineering and Enhanced Optical Absorption of Vertical Germanene/ h ‐AlN Bilayer Heterostructure: Potential New Electronics and Optoelectronics

Sub-Angstrom Characterization of the Structural Origin for High In-Plane Anisotropy in 2D GeS2.

First-principles calculations of optoelectronic and thermoelectric properties of semiconducting germanium chalcogenide