Abstract:We perform analyses of cryogenic heat capacity data sets, that are available from thermo‐physical literature for group‐IV materials (diamond, Si, Ge, and 3C‐SiC), a variety of III–V materials (BN, BP, BAs, GaN, GaP, GaAs, GaSb, InP, InAs, InSb), and several II–VI materials (ZnO, ZnS, ZnSe, CdS, and CdTe). A prominent new result of the present study consists above all in a general high‐precision formula, $\Theta _D (T) = \Theta _D (0)\left( {1 + a_2 T^2 + a_4 T^4 } \right)^{{{ - 1} \mathord{\left/ {\vphantom {{ - 1} 3}} \right. \kern-\nulldelimiterspace} 3}}$, for the limiting behavior of the Debye temperature in the liquid helium–hydrogen region. The actual magnitudes of limiting Debye temperatures, $\Theta _D (0)$, in combination with the associated (throughout positive) curve shape coefficients, $a_2$ and $a_4$, are given in unambiguous way in terms of the three lowest‐order heat capacity coefficients involved by conventional Taylor series expansions for lattice heat capacities within the cryogenic range up to temperatures of order ${{\Theta _D (0)} \mathord{\left/ {\vphantom {{\Theta _D (0)} {30}}} \right. \kern-\nulldelimiterspace} {30}}$. Among the variety of presently specified calorimetric $\Theta _D (0)$ values, particularly those obtained for a series of wide‐bandgap materials may be of considerable interest. These are about 1110 K for 3C‐SiC, 1860 for c‐BN, 950 K for BP, 592 K for GaN, 429 or 392 K for isotopically modified samples 64Zn16O and 68Zn18O, respectively, 414 K for natural ZnO, 349 K for ZnS, 276 K for ZnSe, and 236 K for CdS.

Thermal Expansion of Germanium Isotopes at Low Temperature

Electrical Properties of Germanium Semiconductors at Low Temperatures

Temperature-induced density anomaly in Te-Rich liquid germanium tellurides: p versus sp3 bonding?

In situ X-ray diffraction study of germanium at pressures up to 11 GPa and temperatures up to 950 K

Infrared Lattice Absorption Bands in Germanium, Silicon, and Diamond

Limiting Debye temperature behavior following from cryogenic heat capacity data for group‐IV, III–V, and II–VI materials

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Thermal properties of medium-sized Ge clusters

Melting point of high-purity germanium stable isotopes

Temperature Dependence of Germanium Vacancy Centers in High-Quality Diamond after 300 Kev Ion Implantation

Thermal stability of the properties of germanium crystals for IR optics

Electronic structure of superconducting gallium-doped germanium from ab-initio calculations

Impurity concentration dependent electrical conduction in germanium crystal at low temperatures

Investigation of the influence of lattice anharmonicity on the heat capacities of diamond, silicon, and germanium

Germanium Single Crystals for Photonics

Temperature- and energy-dependent phase shifts of resonant multiple-beam X-ray diffraction in germanium crystals.

Change in baric properties with decreasing size of germanium nanocrystal

Theoretical investigation of the phonon spectrum and the lattice thermal conductivity in GeTe.

Anomalous Transition in Thermal Conductivity in Germanene Monolayer

Dependence of the Position of Phonon IR Absorption Bands of Germanium Isotopes on Their Mass Number

Characterization of high-purity germanium detectors with amorphous germanium contacts in cryogenic liquids