Abstract:The electronic properties of defects resulting from electron irradiation of germanium at low temperatures have been investigated. The recent success in preparing n(+)p junctions on germanium has opened a new opportunity to address fundamental questions regarding point defects and their related energy levels by allowing an access to the lower half of the band gap. In this work we apply various space-charge capacitance-transient spectroscopy techniques connected on line with the electron-beam facility. In n-type germanium we identify a level at about 0.14 eV below the conduction band whose properties resemble in many respects those of a defect assigned previously to the close vacancy-interstitial or Frenkel pair. This pair seems to annihilate over a small barrier at about 70 K, and its stability is particularly sensitive to the irradiation temperature and energy. We also observe two coupled levels at 0.08 and 0.24 eV below the conduction band stable up to 160 K. Recent independent theoretical work has predicted the existence of the single and double donor of the germanium interstitial with energy levels matching exactly these two values. Given these identifications hold, they mark a major difference with silicon where both the Frenkel pair and self-interstitial have never been caught. In p-type germanium, two levels were found. The shallower one, located at about 0.14 eV above the valence band, is tentatively assigned to the vacancy. It exhibits a field-driven instability at about 80 K making its analysis quite difficult. The application of a reverse bias, required by the space-charge spectroscopy, leads to a strong drift process sweeping this defect out of the observation area without necessarily provoking its annealing. Unlike silicon, in which the vacancy has four charge states, only one vacancy-related level seems to exist in germanium and this level is very likely a double acceptor. Finally, a very peculiar observation is made on a hole midgap trap, which, in many respects, behaves as the boron interstitial in silicon. This has led us to suggest that it may stem from the gallium interstitial, a natural dopant of our germanium materials, whose presence would be the fingerprint of the Watkins replacement mechanism in germanium.

Infrared Lattice Absorption Bands in Germanium, Silicon, and Diamond

Thermal Expansion of Germanium Isotopes at Low Temperature

Chemical Impurities and Lattice Defects in High-Purity Germanium

Accurate lattice constants from multiple reflection measurements. II. Lattice constants of germanium silicon, and diamond

Germanium in Czochralski Silicon

Critical-point analysis of the phonon spectra of diamond, silicon and germanium

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Infrared Spectra of Silicon Nanowires

Optical properties and electronic structure of amorphous Ge and Si

Gamma-Ray Compton Profiles of Diamond, Silicon, and Germanium

Interface Layers in In0.532ga0.468as/Inp Superlattices

Thermal stability of the properties of germanium crystals for IR optics

Temperature Dependence of Germanium Vacancy Centers in High-Quality Diamond after 300 Kev Ion Implantation

Far Infrared-Absorption Of Amorphous Gaas And Ge

Low-temperature Irradiation-Induced Defects in Germanium:In Situanalysis

Impurity concentration dependent electrical conduction in germanium crystal at low temperatures

Anharmonic Vibrational Spectroscopy of Germanium-Containing Clusters, GexC4- x and GexSi4- x (x = 0-4), for Interstellar Detection

Infrared Absorption in SiGe/Si Multiple Quantum Wells

Dependence of the Position of Phonon IR Absorption Bands of Germanium Isotopes on Their Mass Number

The effect of pressure on the properties of germanium and silicon

Atomic structure and energy of grain boundaries in silicon, germanium and diamond