Abstract:Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$ ranging from 0 to 0.21 is incorporated in $Si:B$ : 1) through a precursor gas by Gas Immersion Laser Doping; 2) by ion implantation, followed by nanosecond laser annealing; 3) by UHV-CVD growth of a thin Ge layer, followed by nanosecond laser annealing. The 30 nm and 80 nm thick $Si_{1-x}Ge_{x}:B$ epilayers display superconducting critical temperatures $T_c$ tuned by B and Ge between 0 and 0.6 K. Within BCS weak-coupling theory, $T_c$ evolves exponentially with both the density of states and the electron-phonon potential. While B doping affects both, through the increase of the carrier density and the tensile strain, Ge incorporation allows addressing independently the lattice deformation influence on superconductivity. To estimate the lattice parameter modulation with B and Ge, Vegard's law is validated for the ternary $SiGeB$ bulk alloy by Density Functional Theory calculations. Its validity is furthermore confirmed experimentally by X-Ray Diffraction. We highlight a global linear dependence of $T_c$ vs. lattice parameter, common for both $Si:B$ and $Si_{1-x}Ge_{x}:B$, with $\delta T_c/T_c \sim 50\,\%$ for $\delta a/a \sim 1\,\%$.

What problem does this paper attempt to address?

This paper aims to solve the key problems in achieving superconductivity in hyper - doped Si$_{1 - x}$Ge$_x$:Be epitaxial layers. Specifically, the research introduced boron concentrations exceeding the solid - solubility limit through nanosecond laser doping technology and explored the effects of different germanium contents on the superconducting critical temperature $T_c$. This study not only focuses on how to achieve superconductivity in SiGe materials but also deeply investigates the specific effects of boron and germanium doping on material structure deformation and superconducting properties. ### Main research questions: 1. **Achieving superconductivity**: How to use nanosecond laser doping technology to achieve superconductivity in Si$_{1 - x}$Ge$_x$:Be epitaxial layers. 2. **Regulation of superconducting critical temperature**: Study the effects of different boron and germanium doping concentrations on the superconducting critical temperature $T_c$. 3. **Relationship between structure deformation and superconductivity**: Explore how the structure deformation caused by boron and germanium doping affects superconducting properties, especially in the case of a fixed carrier concentration. ### Research methods: - **Nanosecond laser doping**: Use nanosecond laser doping technology (GILD) to introduce a high concentration of boron in Si$_{1 - x}$Ge$_x$:Be epitaxial layers. - **Germanium doping methods**: Introduce germanium through three different methods: gas - immersion laser doping, nanosecond laser annealing after ion implantation, and nanosecond laser annealing after UHV - CVD growth of a thin germanium layer. - **Structure characterization**: Use X - ray diffraction (XRD) to measure the lattice parameters of the material and verify Vegard's law. - **Superconducting property testing**: Measure the superconducting critical temperature $T_c$ through the resistance - versus - temperature curve and measure it under different magnetic fields to determine the critical magnetic field $H_{c2}$. ### Key findings: - **Regulation of superconducting critical temperature**: With different boron and germanium doping concentrations, the superconducting critical temperature $T_c$ can vary between 0 and 0.6 K. - **Effect of structure deformation**: Changes in lattice parameters have a significant impact on the superconducting critical temperature. For every 1% change in lattice parameters, the superconducting critical temperature changes by approximately 50%. - **Application of BCS theory**: Through the BCS weak - coupling theory, the research found that the superconducting critical temperature $T_c$ grows exponentially with the electron - phonon coupling constant $\lambda$, and $\lambda$ is related to the density of states and the electron - phonon interaction potential. ### Conclusion: This research successfully achieved superconductivity in hyper - doped Si$_{1 - x}$Ge$_x$:Be epitaxial layers and finely controlled the superconducting critical temperature by adjusting the doping concentrations of boron and germanium. The research results show that a small change in lattice parameters has a significant impact on superconducting properties, which provides an important theoretical and experimental basis for further optimizing SiGe - based superconducting materials.

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