Abstract:Effect of Ge-doping at the non-magnetic site (Si-site) of the Mn-based binary alloy Mn 5 Si 3 has been explored through temperature-dependent x-ray diffraction, dc-magnetic, and electrical transport measurements. All the doped alloys show D 8 8 type hexagonal structure with space group P 6 3 / m c m at room temperature and undergoes two structural distortions, hexagonal ( P 6 3 / m c m ) → orthorhombic ( C c m m ) → orthorhombic ( C c 2 m ), on cooling. The magnetic characters of these orthorhombic ( C c 2 m ), orthorhombic ( C c m m ), and hexagonal ( P 6 3 / m c m ) phases are non-collinear antiferromagnetic (AFM1), collinear antiferromagnetic (AFM2), and paramagnetic (PM), respectively. Doping of Ge results in a significant increase in the AFM1 to AFM2 transition temperature ( T N 1 ). However, the AFM2 to PM transition point remains unchanged. In addition, a reasonable increase in the critical field values of the AFM1 to AFM2 transition via another non-collinear antiferromagnetic phase (AFM1 ′ ) with increasing Ge concentration has been observed, indicating the strengthening of AFM1 and AFM1 ′ phases over the AFM2 phase. Such behaviors make the observation of unusual magnetic properties of undoped Mn 5 Si 3 alloys, like inverted hysteresis loop (IHL) and thermomagnetic irreversibility (TI), more evident for these Ge-doped alloys. Further, this study unfolds the presence of conventional and inverse magnetocaloric effect and they found to decrease with Ge doping. An interesting interplay for positive and negative magnetoresistance has also been observed in all the studied alloys.

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Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Combinatorial Synthesis and Characterization of a Ternary Epitaxial Film of Co and Mn Doped Ge (001)

Investigating the strain controlled epitaxial growth of Mn 3 Ge films through thickness modulation

Heavily phosphorus doped germanium with local strain compensation effect by Co-implantation and rapid thermal process

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Strain-induced Switching Between Noncollinear and Collinear Spin Configuration in Magnetic Mn5Ge3 Films

Novel Germanium-Based Magnetic Semiconductors

Research Update: Strain and Composition Effects on Ferromagnetism of Mn0.05Ge0.95 Quantum Dots

Quantum Effects of Strain Influence on the Doping Energy in Semiconductors

Crafting the strain state in epitaxial thin films: A case study of CoFe2O4 films on Pb(Mg,Nb)O3-PbTiO3

On the Strain in N-Type Gan

Superconductivity in hyperdoped Ge by molecular beam epitaxy

Strain Induced Quantum Effect in Semiconductors

Strain Status in Fe- and Si- Doped GaN Epilayers Grown on Sapphire

Fermi Level Effect on Strain of Si Doped Gan

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Influence of Ge-doping on the collinear and non-collinear antiferromagnetic phases of Mn 5 Si 3 alloy

Contrasting Growth Modes of Mn on Ge(100) and Ge(111) Surfaces: Subsurface Segregation Versus Intermixing

Strain-dependent grain boundary properties of n-type germanium layers