Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Evidence of hexagonal germanium grains on annealed monolayer MoS 2

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS 2(1- x ) Se 2 x Alloy

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2

Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene

Structural and electronic properties of germanene on MoS$_2$

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Van Der Waals Epitaxy of Ge Films on Mica

In Situ XPS Investigation of Transformations at Crystallographically Oriented MoS2 Interfaces

Halide Vapor Phase Epitaxy of Monolayer Molybdenum Diselenide Single Crystals

High-Temperature In Situ Investigation of Chemical Vapor Deposition to Reveal Growth Mechanisms of Monolayer Molybdenum Disulfide

Single‐Crystal MoS 2 Monolayer Wafer Grown on Au (111) Film Substrates

Evidence for Exciton Crystals in a 2D Semiconductor Heterotrilayer

Insight into the Growth Behaviors of MoS2 Nanograins Influenced by Step Edges and Atomic Structure of the Substrate

Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process

Insight into the growth behaviors of MoS2 nanograms influenced by step edges and atomic structure of the substrate

Spectroscopic Visualization of Grain Boundaries of Monolayer Molybdenum Disulfide by Stacking Bilayers