Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS 2(1- x ) Se 2 x Alloy

Dan-Hui Lü,Dan-Cheng Zhu,Chuan-Hong Jin
DOI: https://doi.org/10.3866/PKU.WHXB201705123
2017-01-01
Acta Physico-Chimica Sinica
Abstract:We report a microscopic study on the process for the substitution of selenium into monolayer molybdenum disulfide via a joint CVD-STEM characterization. Results from quantitative and statistic STEM reveal that the concentration of Se atoms in grain boundaries is much higher than that in intra-domains of monolayer MoS2(1-x) Se-2x alloy. In-depth analysis finds that Se atoms are enriched in the distorted regions due to presence of dislocation cores on the grain boundary, which can be further understood by considering the difference of chemical reactivity for doping reaction in different types of grain boundaries with different symmetry and different misorientation angles. Our results pave the way towards the controlled growth of alloyed two-dimensional transition metal dichalcogenide materials with a high precision, and their further applications.
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