Abstract:Controllable phase modulation and electronic structure are essential factors in the study of two-dimensional transition metal dichalcogenides due to their impact on intriguing physical properties and versatile optoelectronic applications. Here, we report the phase-controlled growth of ternary monolayer MoSe2xTe2(1−x) (0 ≤ x ≤ 1) alloys induced through in situ doping and composition tuning via molecular beam epitaxy. Our approach leverages the substitution of selenium for tellurium to lower the energy barrier of the semi-conducting 2H and semi-metallic 1T′ phase transition. The alloys’ lattice constants, Mo-3d binding energy and electronic bandgap were demonstrated to be tunable by varying the selenium composition (x), respectively. First-principles calculations agree well with our experimental results, revealing that the valence band bowing effect of the monolayer alloys is attributed to the difference in coupling between anions and cations. This work provides a new pathway for phase modulation growth and controllable electronic structure of ternary monolayer transition metal dichalcogenide alloys, which is of great significance for ohmic contact and band engineering in developing transistor device applications using two-dimensional semiconductors.

What problem does this paper attempt to address?

The problem this paper attempts to address is the controlled phase modulation and electronic structure regulation of monolayer MoSe\(_{2x}\)Te\(_{2(1−x)}\) alloys using Molecular Beam Epitaxy (MBE) technology. Specifically, the researchers aim to reduce the energy barrier for the transition from the semimetallic 1T' phase to the semiconducting 2H phase through partial substitution of tellurium (Te) with selenium (Se), and to achieve tunability of the alloy's lattice constant, Mo-3d binding energy, and electronic bandgap through compositional control. ### Main Issues 1. **Phase Modulation**: How to achieve a controlled transition from the 1T' phase to the 2H phase in monolayer MoSe\(_{2x}\)Te\(_{2(1−x)}\) alloys through Se doping and compositional adjustment. 2. **Electronic Structure Regulation**: How to precisely control the lattice constant, Mo-3d binding energy, and electronic bandgap of the alloy by varying the Se content. 3. **Combination of Theory and Experiment**: How to use first-principles calculations (Density Functional Theory, DFT) to validate experimental results and reveal the valence band bending effect and its physical mechanism in the alloy. ### Research Background Two-dimensional transition metal dichalcogenides (TMDCs) have broad prospects in electronic and optoelectronic device applications due to their polymorphic phase structures and unique physical properties. However, achieving controlled phase modulation and electronic structure regulation of these materials remains a challenge. Traditional phase transition methods such as Chemical Vapor Deposition (CVD) and Chemical Vapor Transport (CVT) are effective but have limitations in precisely controlling composition and phase structure. Therefore, this study uses MBE technology to achieve controlled growth and electronic structure regulation of monolayer MoSe\(_{2x}\)Te\(_{2(1−x)}\) alloys through Se doping and compositional adjustment. ### Research Methods 1. **MBE Growth**: Grow monolayer MoSe\(_{2x}\)Te\(_{2(1−x)}\) alloys on HOPG substrates using MBE technology. 2. **Characterization Techniques**: - **Reflection High-Energy Electron Diffraction (RHEED)**: Used to observe lattice structure changes during the phase transition. - **X-ray Photoelectron Spectroscopy (XPS)**: Used to analyze the chemical composition and Mo-3d binding energy of the alloy. - **Scanning Tunneling Microscopy/Spectroscopy (STM/STS)**: Used to measure the surface morphology and electronic bandgap of the alloy. 3. **Theoretical Calculations**: Use DFT calculations to validate experimental results and reveal the physical mechanism of the electronic structure and valence band bending effect in the alloy. ### Main Findings 1. **Phase Transition Control**: Successfully achieved a controlled transition from the 1T' phase to the 2H phase in monolayer MoSe\(_{2x}\)Te\(_{2(1−x)}\) alloys through Se doping. 2. **Electronic Structure Regulation**: Achieved precise control of the lattice constant, Mo-3d binding energy, and electronic bandgap of the alloy by varying the Se content. 3. **Valence Band Bending Effect**: DFT calculations indicate that the valence band bending effect is mainly due to the coupling differences between the Mo-3d orbitals and the Se/Te anion orbitals induced by Se doping. ### Significance This study provides a new approach for phase modulation growth and electronic structure regulation of 2D TMDCs alloys, which is significant for the development of transistor devices and novel optoelectronic devices based on 2D semiconductors. In particular, by precisely controlling the electronic structure of the alloy, it is possible to optimize ohmic contacts and band engineering, thereby improving device performance.

Controllable phase modulation and electronic structures of monolayer MoSe2xTe2(1−x) alloys grown via molecular beam epitaxy

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Semiconductors: Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys (adv. Mater. 17/2014)

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS 2(1- x ) Se 2 x Alloy

Synthesis of component-controllable monolayer MoxW(1- x)S2 ySe2(1- y) alloys with continuously tunable band gap and carrier type

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Ternary MoSe2xTe2-2x Alloy with Tunable Band Gap for Electronic and Optoelectronic Transistors.

Growth of MoS(2(1-x))Se(2x) (x = 0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition.

Band engineering in epitaxial monolayer transition metal dichalcogenides alloy Mo<i><sub>x</sub></i>W<sub>1-<i>x</i></sub>Se<sub>2</sub> thin films

Fabrication and Optical Performance of Mo1-xWxS2 Monolayer with Different Composition Ranges Via One-Step Chemical Vapor Deposition Approach

Controllable Growth of Wafer-Scale Monolayer Transition Metal Dichalcogenides Ternary Alloys with Tunable Band Gap.

Synthesis of 2D MoS2(1- x)Se2 x semiconductor alloy by chemical vapor deposition

CVD synthesis of Mo(1−x)WxS2 and MoS2(1−x)Se2x alloy monolayers aimed at tuning the bandgap of molybdenum disulfide

Direct Synthesis and Enhanced Rectification of Alloy‐to‐Alloy 2D Type‐II MoS 2(1‐ x ) Se 2 x /SnS 2(1‐ y ) Se 2 y Heterostructures

Selective Selenium-Substituted Metallic MoTe2 Toward Ternary Atomic Layers with Tunable Semiconducting Character

Atomic and electronic structure of two-dimensional Mo(1-x)WxS2 alloys

Controllable Doping Characteristics for WSxSey Monolayers Based on the Tunable S/Se Ratio.

Phase Transition and Electronic Structure Evolution of MoTe2 Induced by W Substitution