Abstract:The discovery of graphene in 2004 by Konstantin Novoselov and Andre Geim opened a new scientific arena: “2D materials”. The finding of new layered and non-layered materials and their potential applications in various fields has been taken a great attention in recent years. A wide variety of 2D materials such as transition metal dichalcogenides (TMDs), transition metal trichalogenides (Bi2Se3, Bi2Te3, etc.), transition metal monochalcogenide (GaSe, GaS, etc.), transition metal thiophosphides (MnPS3, FePS3, etc.), silicene, phosphorene and hexagonal boron nitride have been found to possess many fascinating and unique properties that are promising for various potential applications such as in optoelectronics, sensors, spintronics, valleytronics, energy storage and catalysis. Among the 2D family, the TMDs grasp diverse properties, ranging from insulator, semimetal, metal, semiconductor and superconductor and make them most interesting 2D materials in both academic and industrial perspectives. The TMDs are usually abbreviated by the chemical formula of MX2, where M is a transition metal such as Cr, Mo, W, Re, Ta, Zr and Pd, and X is a chalcogen of S, Se and Te. The different filling states of the d orbitals in this wide range of transition metals gives rise to TMDs with versatile properties. Among TMDs, group 6 TMDs such as MoS2, WS2, MoSe2 and WSe2 are attracting great attention due to their semiconducting nature, layer-dependent bandgap and strong light–matter interaction. The finite and tunable bandgap of group 6 TMDs compensate the lack in microelectronic application of graphene which arises due to its gapless feature. Herein we address different phases of TMDs including hexagonal (H), trigonal (T) and rhombohedral (R). We reviewed the optical and electronic properties such as thickness-dependent band structure, spin–orbit coupling, excitonic properties, Berry-phase-related properties and valley Hall effect of semiconducting TMDs. The modulation of electronic properties by external stimuli such as electric field and strain is also discussed in this chapter. The metallic TMDs such as 1T phase of group 6 TMDs, Ti-, V-, Nb-based TMD and 2H phase of NbS2, NbSe2, TaS2 and TaSe2 are discussed. The magnetism, strain and doping-induced magnetism in both metallic and semiconducting TMDs are addressed in this chapter.

Selective Selenium-Substituted Metallic MoTe2 Toward Ternary Atomic Layers with Tunable Semiconducting Character

Single-layer Mo5Te8 ― A New Polymorph of Layered Transition-Metal Chalcogenide

Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS 2(1- x ) Se 2 x Alloy

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Modulation of electronic state in copper-intercalated 1T-TaS 2

Ternary MoSe2xTe2-2x Alloy with Tunable Band Gap for Electronic and Optoelectronic Transistors.

Phase evolution and superconductivity enhancement in Se-substituted MoTe$_2$ thin films

Mechanical Properties of Monolayer Ternary Transitional Metal Dichalogenides MoS2xTe2(1 − X): A Molecular Dynamics Study

Controllable phase modulation and electronic structures of monolayer MoSe2xTe2(1−x) alloys grown via molecular beam epitaxy

Controllable 2H/3R phase transition and conduction behavior change in MoSe2:Nb substitution by high pressure synthesis for promising thermoelectric conversion

Large-Size Superlattices Synthesized by Sequential Sulfur Substitution-Induced Transformation of Metastable MoTe2

Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications

Tailoring of Bandgap and Spin-Orbit Splitting in ZrSe 2 with Low Substitution of Ti for Zr

Synthesis and Characterization of 2D Ternary Compound TMD Materials Ta3VSe8

Simulation of Transition Metal Dichalcogenides

Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe 2

Preparation and optoelectronic performance of two-dimensional MoSe2/WSe2 lateral and vertical heterostructures

Transformation of Monolayer MoS 2 into Multiphasic MoTe 2 : Chalcogen Atom-Exchange Synthesis Route

Controlled synthesis of MoxW1-xTe2 atomic layers with emergent quantum states

Tuning the critical Li intercalation concentrations for MoX$_2$ bilayer phase transitions

Tuning Interlayer Exciton Emission with TMD Alloys in van der Waals Heterobilayers of Mo0.5W0.5Se2 and Its Binary Counterparts