Abstract:Transition metal dichalcogenide (TMDC) monolayers are newly discovered semiconductors for a wide range of applications in electronics and optoelectronics. Most studies have focused on binary monolayers that share common properties: direct optical bandgap, spin-orbit (SO) splittings of hundreds of meV, light-matter interaction dominated by robust excitons and coupled spin-valley states of electrons. Studies on alloy-based monolayers are more recent, yet they may not only extend the possibilities for TMDC applications through specific engineering but also help understanding the differences between each binary material. Here, we synthesized highly crystalline Mo$_{(1-x)}$W$_{x}$Se$_2$ to show engineering of the direct optical bandgap and the SO coupling in ternary alloy monolayers. We investigate the impact of the tuning of the SO spin splitting on the optical and polarization properties. We show a non-linear increase of the optically generated valley polarization as a function of tungsten concentration, where 40% tungsten incorporation is sufficient to achieve valley polarization as high as in binary WSe2. We also probe the impact of the tuning of the conduction band SO spin splitting on the bright versus dark state population i.e. PL emission intensity. We show that the MoSe2 PL intensity decreases as a function of temperature by an order of magnitude, whereas for WSe2 we measure surprisingly an order of magnitude increase over the same temperature range (T=4-300K). The ternary material shows a trend between these two extreme behaviors. These results show the strong potential of SO engineering in ternary TMDC alloys for optoelectronics and applications based on electron spin- and valley-control.

Tailoring of Bandgap and Spin-Orbit Splitting in ZrSe 2 with Low Substitution of Ti for Zr

Space-confined and Substrate-Directed Synthesis of Transition-Metal Dichalcogenide Nanostructures with Tunable Dimensionality.

Selective Selenium-Substituted Metallic MoTe2 Toward Ternary Atomic Layers with Tunable Semiconducting Character

Tuning Band Gaps in Twisted Bilayer MoS_2

Tunability of Multiple Ultraflat Bands and Effect of Spin-Orbit Coupling in Twisted Bilayer Transition Metal Dichalcogenides

Transition from Semimetal to Semiconductor in ZrTe2 Induced by Se Substitution

Spin-orbit engineering in transition metal dichalcogenide alloy monolayers

Tuning Electronic and Magnetic Properties of Early Transition Metal Dichalcogenides via Tensile Strain

Synthesis and Semiconducting Behavior of Zr (cu, Fe) Se2− Single Crystals

Band Structure Tailoring in ZrSe2 Single Crystal Via Trace Rhenium Intercalation

Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications

Thermal transport and mixed valence in ZrTe$_3$ doped with Hf and Se

Electronic Structures of Cr-Intercalated ZrTe2 Revealed by Angle-Resolved Photoemission Spectroscopy

Controllable Growth of Wafer-Scale Monolayer Transition Metal Dichalcogenides Ternary Alloys with Tunable Band Gap.

Electronic Structures of Cr-Intercalated ZrTe<sub>2</sub> Revealed by Angle-Resolved Photoemission Spectroscopy

Thermal transport and mixed valence in ZrTe 3 doped with Hf and Se

Electronic structure and spin-orbit coupling in ternary transition metal chalcogenides Cu2TlX (2) (X = Se, Te)

Unveiling the properties of transition-metal dichalcogenides: a comprehensive study of WTe2, WSe2, ZrTe2, and NiTe2 in bulk and monolayer forms

A Non-Rigid Shift of Band Dispersions Induced by Cu Intercalation in 2H-Tase 2

Structural, elastic, bonding, optoelectronic, and some thermo-physical properties of transition metal dichalcogenides ZrX2 (X = S, Se, Te): Insights from ab-initio calculations

Manipulating Topological Properties in Bi$_2$Se$_3$/BiSe/TMDC Heterostructures with Interface Charge Transfer