Synthesis and Semiconducting Behavior of Zr (cu, Fe) Se2− Single Crystals

Qianhui Mao,Xiaodong Geng,Jinfeng Yang,Ruixue Li,Haoshan Hao,Jinhu Yang,Hangdong Wang,Binjie Xu,Minghu Fang
DOI: https://doi.org/10.1016/j.physb.2019.04.037
2019-01-01
Abstract:We report the synthesis and electrical resistivity of Zr (Cu, Fe)Se2-delta single crystals with layered hexagonal structure (space group P-3M1, No. 164). Se vacancies are found existed in all pristine samples. Adding Fe into the raw materials results in substitution of Zr and the lattice parameters are found almost unaffected while that with Cu results in intercalation of the van der Waals gap and the lattice parameters are expanded essentially. All compounds display semiconducting behavior, i.e. negative temperature dependence, and the activation energy (Delta) estimated from thermal activation model are in the range of 50-200 meV. We also observe spin-glass-like behavior in the Fe-containing samples.
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